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參數(shù)資料
| 型號(hào)： | X22C12DMB |
| 英文描述： | Nonvolatile Static RAM |
| 中文描述： | 非易失性靜態(tài)RAM |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 60K |
| 代理商： | X22C12DMB |
X22C12
2
PIN DESCRIPTIONS AND DEVICE OPERATION
Addresses (A
0
–A
7
)
The address inputs select a 4-bit memory location
during a read or write operation.
Chip Select (
CS
)
The Chip Select input must be LOW to enable read or
write operations with the RAM array.
CS
HIGH will place
the I/O pins in the high impedance state.
Write Enable (
WE
)
The Write Enable input controls the I/O buffers, deter-
mining whether a RAM read or write operation is en-
abled. When
CS
is LOW and
WE
is HIGH, the I/O pins
will output data from the selected RAM address loca-
tions. When both
CS
and
WE
are LOW, data presented
at the I/O pins will be written to the selected address
location.
Data In/Data Out (I/O
1
–I/O
4
)
Data is written to or read from the X22C12 through the
I/O pins. The I/O pins are placed in the high impedance
state when either
CS
is HIGH or during either a store or
recall operation.
STORE
The
STORE
input, when LOW, will initiate the transfer of
the entire contents of the RAM array to the E
2
PROM
array. The
WE
and
RECALL
inputs are inhibited during
the store cycle. The store operation is completed in 5ms
or less.
A store operation has priority over RAM read/write
operations. If
STORE
is asserted during a read opera-
tion, the read will be discontinued. If
STORE
is asserted
during a RAM write operation, the write will be immedi-
ately terminated and the store performed. The data at
the RAM address that was being written will be unknown
in both the RAM and E
2
PROM arrays.
RECALL
The
RECALL
input, when LOW, will initiate the transfer
of the entire contents of the E
2
PROM array to the RAM
array. The transfer of data will be completed in 1
μ
s or
less.
An array recall has priority over RAM read/write opera-
tions and will terminate both operations when
RECALL
is asserted.
RECALL
LOW will also inhibit the
STORE
input.
Automatic Recall
Upon power-up the X22C12 will automatically recall
data from the E
2
PROM array into the RAM array.
Write Protection
The X22C12 has three write protect features that are
employed to protect the contents of the nonvolatile
memory.
V
CC
Sense—All functions are inhibited when V
CC
is
<3.5V typical.
Write Inhibit—Holding either
STORE
HIGH or
RECALL
LOW during power-up or power-down will
prevent an inadvertent store operation and E
2
PROM
data integrity will be maintained.
Noise Protection—A
STORE
pulse of typically less
than 20ns will not initiate a store cycle.
PIN NAMES
Symbol
A
0
–A
7
I/O
1
–I/O
4
WE
CS
RECALL
STORE
V
CC
V
SS
NC
Description
Address Inputs
Data Inputs/Outputs
Write Enable
Chip Select
Recall
Store
+5V
Ground
No Connect
3817 PGM T01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| X22C12PM | Nonvolatile Static RAM |
| X22C12PMB | Nonvolatile Static RAM |
| X22C12S | Nonvolatile Static RAM |
| X22C12SI | Nonvolatile Static RAM |
| X22C12SM | Nonvolatile Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| X22C12P | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:Nonvolatile Static RAM |
| X22C12PI | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:Nonvolatile Static RAM |
| X22C12PM | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:Nonvolatile Static RAM |
| X22C12PMB | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:Nonvolatile Static RAM |
| X22C12S | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:Nonvolatile Static RAM |
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