參數(shù)資料
型號(hào): X22C12SI
英文描述: Nonvolatile Static RAM
中文描述: 非易失性靜態(tài)RAM
文件頁(yè)數(shù): 4/12頁(yè)
文件大小: 60K
代理商: X22C12SI
X22C12
4
POWER-UP TIMING
Symbol
Parameter
Max.
Units
μ
s
ms
t
PUR(5)
t
PUW(5)
Power-up to Read Operation
Power-up to Write or Store Operation
100
5
3817 PGM T07
MODE SELECTION
CE
WE
RECALL
STORE
I/O
Mode
H
L
L
L
X
H
X
H
X
H
L
L
H
X
H
X
H
H
H
H
L
L
H
H
H
H
H
H
H
H
L
L
Output High Z
Output Data
Input Data High
Input Data Low
Output High Z
Output High Z
Output High Z
Output High Z
Not Selected
(3)
Read RAM
Write “1” RAM
Write “0” RAM
Array Recall
Array Recall
Nonvolatile Store
(4)
Nonvolatile Store
(4)
3817 PGM T05.1
ENDURANCE AND DATA RETENTION
Parameter
Min.
Units
Endurance
Store Cycles
Data Retention
100,000
1,000,000
100
Data Changes Per Bit
Store Cycles
Years
3817 PGM T06
A.C. CONDITIONS OF TEST
Input Pulse Levels
Input Rise and
Fall Times
Input and Output
Timing Levels
0V to 3V
10ns
1.5V
3817 PGM T04.1
EQUIVALENT A.C. LOAD CIRCUIT
Notes:
(3) Chip is deselected but may be automatically completing a store cycle.
(4)
STORE
= LOW is required only to initiate the store cycle, after which the store cycle will be automatically completed
(e.g.
STORE
= X).
(5) t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated. These
parameters are periodically sampled and not 100% tested.
3815 FHD F09.1
919
497
OUTPUT
100pF
5V
相關(guān)PDF資料
PDF描述
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