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參數(shù)資料
| 型號(hào)： | X25F128SI-5 |
| 英文描述： | SerialFlash⑩ Memory With Block Lock⑩ Protection |
| 中文描述： | SerialFlash⑩內(nèi)存區(qū)塊可鎖定的⑩保護(hù) |
| 文件頁(yè)數(shù)： | 5/14頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | X25F128SI-5 |
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X25F128
5
Figure 1. Read SerialFlash Memory Array Operation Sequence
Operational Notes
The device powers-up in the following state:
The device is in the low power standby state.
A HIGH to LOW transition on
CS
is required to
enter an active state and receive an instruction.
SO pin is high impedance.
The program enable latch is reset.
Data Protection
The following circuitry has been included to prevent
inadvertent programming:
The program enable latch is reset upon power-up.
A program enable instruction must be issued to set
the program enable latch.
CS
must come HIGH at the proper clock count in
order to start a program cycle.
Figure 2. Read Status Register Operation Sequence
0
1
2
3
4
5
6
7
8
9
10
20 21 22 23 24 25 26 27 28 29 30
7
6
5
4
3
2
1
0
DATA OUT
CS
SCK
SI
SO
MSB
HIGH IMPEDANCE
INSTRUCTION
16 BIT ADDRESS
15 14 13
3
2
1
0
6829 ILL F03
0
1
2
3
4
5
6
7
8
9
10
11
12 13 14
7
6
5
4
3
2
1
0
DATA OUT
CS
SCK
SI
SO
MSB
HIGH IMPEDANCE
INSTRUCTION
6829 ILL F04
相關(guān)PDF資料 |
PDF描述 |
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| X25F128P | SerialFlash⑩ Memory With Block Lock⑩ Protection |
| X25F128PE | SerialFlash⑩ Memory With Block Lock⑩ Protection |
| X25F128PE-5 | SerialFlash⑩ Memory With Block Lock⑩ Protection |
| X25F128PI | SerialFlash⑩ Memory With Block Lock⑩ Protection |
| X25F128S | SerialFlash⑩ Memory With Block Lock⑩ Protection |
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