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參數(shù)資料
| 型號(hào)： | X2N7000 |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-Channel Enhancement-Mode MOS Transistor |
| 中文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | X2N7000 |
N-Channel Enhancement-Mode
MOS Transistor
2N7000 /BS170L
DESCRIPTION
The 2N7000 utilizes Calogic’s vertical DMOS technology. The
device is well suited for switching applications where B
V
of
60V and low on resistance (under 5 ohms) are required. The
2N7000 is housed in a plastic TO-92 package.
ORDERING INFORMATION
Part
2N7000
BS170L
X2N7000
Package
Plastic TO-92
Plastic TO-92
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
C ORPORATION
1
2
3
TO-92
(TO-226AA)
BOTTOM VIEW
1
2
3
1
2
3
SOURCE
GATE
DRAIN
1
2
3
2N7000
PIN CONFIGURATION
PRODUCT SUMMARY
P/N
V
(BR)DSS
(V)
r
DS(ON)
(
)
I
D
(A)
2N7000
60
5
0.2
BS170
60
5
0.5
CD5
BOTTOM VIEW
1
2
3
1
2
3
DRAIN
GATE
SOURCE
3
2
1
BS170L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| X2N7002 | N-Channel Enhancement-Mode MOS Transistor |
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| X3PM-115KPA | Pre-amplified/3V Excitation/Absolute |
| X3PM-115KPAR | Pre-amplified/3V Excitation/Absolute |
| X3DM-001MPDSR | Pre-amplified/3V Excitation/Differential |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| X2N7002 | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel Enhancement-Mode MOS Transistor |
| X2P1040 | 制造商:AMI 制造商全稱:AMI 功能描述:0.15レm Structured ASIC |
| X2P1148 | 制造商:AMI 制造商全稱:AMI 功能描述:0.15mm Structured ASIC |
| X2P1200 | 制造商:AMI 制造商全稱:AMI 功能描述:0.15レm Structured ASIC |
| X2P1346 | 制造商:AMI 制造商全稱:AMI 功能描述:0.15mm Structured ASIC |
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