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參數(shù)資料
| 型號： | X5165S8I-2.7A |
| 廠商： | INTERSIL CORP |
| 元件分類： | 電源管理 |
| 英文描述： | Thyristor Diode Module; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No |
| 中文描述： | 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8 |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 8/21頁 |
| 文件大?。?/td> | 117K |
| 代理商： | X5165S8I-2.7A |
X5163/X5165 – Preliminary Information
Characteristics subject to change without notice.
8 of 21
REV 1.1 3/5/01
www.xicor.com
To write data to the EEPROM memory array, the user
then issues the WRITE instruction followed by the 16
bit address and then the data to be written. Any
unused address bits are specified to be “0’s”. The
WRITE operation minimally takes 32 clocks. CS must
go low and remain low for the duration of the operation.
If the address counter reaches the end of a page and
the clock continues, the counter will roll back to the first
address of the page and overwrite any data that may
have been previously written.
For the Page Write Operation (byte or page write) to be
completed, CS can only be brought HIGH after bit 0 of
the last data byte to be written is clocked in. If it is
brought HIGH at any other time, the write operation will
not be completed (Figure 4).
To write to the Status Register, the WRSR instruction is
followed by the data to be written (Figure 5). Data bits
0 and 1 must be “0”.
While the write is in progress following a Status Regis-
ter or EEPROM Sequence, the Status Register may be
read to check the WIP bit. During this time the WIP bit
will be high.
OPERATIONAL NOTES
The device powers-up in the following state:
– The device is in the low power standby state.
– A HIGH to LOW transition on CS is required to enter
an active state and receive an instruction.
– SO pin is high impedance.
– The Write Enable Latch is reset.
– The Flag Bit is reset.
– Reset Signal is active for t
PURST
.
Data Protection
The following circuitry has been included to prevent
inadvertent writes:
– A WREN instruction must be issued to set the Write
Enable Latch.
– CS must come HIGH at the proper clock count in
order to start a nonvolatile write cycle.
Figure 6. Read Status Register Sequence
0
1
2
3
4
5
6
7
8
9
10
11 12 13 14
7
6
5
4
3
2
1
0
Data Out
CS
SCK
SI
SO
MSB
High Impedance
Instruction
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| X5165S8I-2.7T1 | THYRISTOR MODULE, 95A, 0800V; Thyristor/Triac type:Thyristor; Voltage, Vdrm:800V; Current, It rms:150A; Current, Itsm:2000A; Current, Igt:150mA; Voltage, Vgt:3.0V; Case style:SEMIPACK 1; Centres, fixing:80mm; Current, It av:95A; RoHS Compliant: Yes |
| X5165S8I-4.5A | THYRISTOR MODULE, 95A 1200V |
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| X5165S8I-4.5A | 功能描述:IC SUPERVISOR CPU 16K EE 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 產(chǎn)品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- 類型:簡單復位/加電復位 監(jiān)視電壓數(shù)目:1 輸出:推挽式，圖騰柱 復位:低有效 復位超時:最小 145 ms 電壓 - 閥值:2.64V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-WQFN 裸露焊盤 供應(yīng)商設(shè)備封裝:16-TQFN-EP（4x4） 包裝:帶卷 (TR) |
| X5165S8IT1 | 功能描述:IC SUPERVISOR CPU 16K EE 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 產(chǎn)品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- 類型:簡單復位/加電復位 監(jiān)視電壓數(shù)目:1 輸出:推挽式，圖騰柱 復位:低有效 復位超時:最小 145 ms 電壓 - 閥值:2.64V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-WQFN 裸露焊盤 供應(yīng)商設(shè)備封裝:16-TQFN-EP（4x4） 包裝:帶卷 (TR) |
| X5165S8IZ | 功能描述:IC CPU SUPERV 16K EEPROM 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 產(chǎn)品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- 類型:簡單復位/加電復位 監(jiān)視電壓數(shù)目:1 輸出:開路漏極或開路集電極 復位:低有效 復位超時:最小為 600 ms 電壓 - 閥值:3.8V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:SC-74A，SOT-753 供應(yīng)商設(shè)備封裝:SOT-23-5 包裝:帶卷 (TR) |
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