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參數(shù)資料
| 型號： | X5323V14Z |
| 廠商： | INTERSIL CORP |
| 元件分類： | 電源管理 |
| 英文描述： | CPU Supervisor with 32Kb SPI EEPROM |
| 中文描述： | 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO14 |
| 封裝： | ROHS COMPLIANT, PLASTIC, TSSOP-14 |
| 文件頁數(shù)： | 9/21頁 |
| 文件大?。?/td> | 360K |
| 代理商： | X5323V14Z |
9
FN8131.1
October 27, 2005
In Circuit Programmable ROM Mode
This mechanism protects the block lock and watchdog
bits from inadvertent corruption.
In the locked state (
programmable ROM mode) the WP pin
is LOW and the nonvolatile bit WPEN is “1”. This mode
disables nonvolatile writes to the device’s status register.
Setting the WP pin LOW while WPEN is a “1” while an
internal write cycle to the status register is in progress
will not stop this write operation, but the operation dis-
ables subsequent write attempts to the status register.
When WP is HIGH, all functions, including nonvolatile
writes to the status register operate normally. Setting
the WPEN bit in the status register to “0” blocks the
WP pin function, allowing writes to the status register
when WP is HIGH or LOW. Setting the WPEN bit to
“1” while the WP pin is LOW activates the programma-
ble ROM mode, thus requiring a change in the WP pin
prior to subsequent status register changes. This
allows manufacturing to install the device in a system
with WP pin grounded and still be able to program the
status register. Manufacturing can then load configura-
tion data, manufacturing time and other parameters
into the EEPROM, then set the portion of memory to
be protected by setting the block lock bits, and finally
set the “OTP mode” by setting the WPEN bit. Data
changes now require a hardware change.
Read Sequence
When reading from the EEPROM memory array, CS is
first pulled low to select the device. The 8-bit READ
instruction is transmitted to the device, followed by the
16-bit address. After the READ opcode and address
are sent, the data stored in the memory at the selected
address is shifted out on the SO line. The data stored
in memory at the next address can be read sequen-
tially by continuing to provide clock pulses. The
address is automatically incremented to the next
higher address after each byte of data is shifted out.
When the highest address is reached, the address
counter rolls over to address $0000 allowing the read
cycle to be continued indefinitely. The read operation
is terminated by taking CS high. Refer to the read
EEPROM Array Sequence (Figure 1).
To read the status register, the CS line is first pulled low
to select the device followed by the 8-bit RDSR instruc-
tion. After the RDSR opcode is sent, the contents of the
status register are shifted out on the SO line. Refer to
the read status register sequence (Figure 2).
Write Sequence
Prior to any attempt to write data into the device, the
“Write Enable” Latch (WEL) must first be set by issuing
the WREN instruction (Figure 3). CS is first taken LOW,
then the WREN instruction is clocked into the device.
must then be taken HIGH. If the user continues the
write operation without taking CS HIGH after issuing the
WREN instruction, the write operation will be ignored.
To write data to the EEPROM memory array, the user
then issues the WRITE instruction followed by the 16
bit address and then the data to be written. Any
unused address bits are specified to be “0’s”. The
WRITE operation minimally takes 32 clocks. CS must
go low and remain low for the duration of the opera-
tion. If the address counter reaches the end of a page
and the clock continues, the counter will roll back to
the first address of the page and overwrite any data
that may have been previously written.
For the page write operation (byte or page write) to be
completed, CS can only be brought HIGH after bit 0 of
the last data byte to be written is clocked in. If it is
brought HIGH at any other time, the write operation
will not be completed (Figure 4).
To write to the status register, the WRSR instruction is
followed by the data to be written (Figure 5). Data bits
0 and 1 must be “0”.
While the write is in progress following a status regis-
ter or EEPROM Sequence, the status register may be
read to check the WIP bit. During this time the WIP bit
will be high.
OPERATIONAL NOTES
The device powers-up in the following state:
– The device is in the low power standby state.
– A HIGH to LOW transition on CS is required to enter
an active state and receive an instruction.
– SO pin is high impedance.
– The write enable latch is reset.
– The flag bit is reset.
– Reset signal is active for t
PURST
.
Data Protection
The following circuitry has been included to prevent
inadvertent writes:
– A WREN instruction must be issued to set the write
enable latch.
– CS must come HIGH at the proper clock count in
order to start a nonvolatile write cycle.
X5323, X5325
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| X5323V14Z-2.7 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:CPU Supervisor with 32Kb SPI EEPROM |
| X5323V14Z-2.7A | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:CPU Supervisor with 32Kb SPI EEPROM |
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| X5325 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:CPU Supervisor with 32Kb SPI EEPROM |
| X5325P | 功能描述:IC CPU SUPRV 32K EE RST HI 8DIP RoHS:否 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 類型:簡單復(fù)位/加電復(fù)位 監(jiān)視電壓數(shù)目:1 輸出:開路漏極或開路集電極 復(fù)位:低有效 復(fù)位超時:標(biāo)準(zhǔn)傳輸延遲為 60 µs 電壓 - 閥值:3V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:SC-74A，SOT-753 供應(yīng)商設(shè)備封裝:SOT-23-5 包裝:Digi-Reel® 其它名稱:LM8364BALMF30DKR |
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