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參數(shù)資料
| 型號： | XB1007-BD-000V |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 4.0-11.0 GHz GaAs MMIC Buffer Amplifier |
| 中文描述： | 4000 MHz - 11000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT PACKAGE-5 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 235K |
| 代理商： | XB1007-BD-000V |
Page 8 of 9
App Note [1] Biasing -
It is recommended to bias this device at Vd=4.5V with Id=130 mA and Vg2=-0.5V with Vg1 left open. It is also recommended
to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on
the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier,
with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain
current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the
applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrange
m
ent -
For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd and Vg1,2) needs to
have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier
B1007-BD
XB1007-BD Vd=4.0 V Id=130 mA
1.00E+05
1.00E+06
1.00E+07
1.00E+08
1.00E+09
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
M
XB1007-BD Vd=4.0 V Id=130 mA
1.00E+00
1.00E+01
1.00E+02
1.00E+03
1.00E+04
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
F
XB1007-BD Vd=4.0 V Id=130 mA
140
142
144
146
148
150
152
154
156
158
160
162
164
166
168
170
172
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
R
XB1007-BD Vd=4.0 V Id=130 mA
120
130
140
150
160
170
180
190
200
210
220
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
T
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
March 2007 - Rev 06-Mar-07
相關(guān)PDF資料 |
PDF描述 |
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| XB1007-BD-EV1 | 4.0-11.0 GHz GaAs MMIC Buffer Amplifier |
| XB1008-BD | 10.0-21.0 GHz GaAs MMIC Buffer Amplifier |
| XB1008-BD-000V | 10.0-21.0 GHz GaAs MMIC Buffer Amplifier |
| XB1008-BD-EV1 | 10.0-21.0 GHz GaAs MMIC Buffer Amplifier |
| XB1009-BD | 14.0-30.0 GHz GaAs MMIC Buffer Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XB1007-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:4.0-11.0 GHz GaAs MMIC Buffer Amplifier |
| XB1007-QT | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN |
| XB1007-QT_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:4.0-11.0 GHz GaAs MMIC |
| XB1007-QT-0G00 | 制造商:M/A-COM Technology Solutions 功能描述:MMICBUFFER AMPLIFIER, QFNEXCELLENT - Bulk 制造商:M/A-COM Technology Solutions 功能描述:MMW BUFFER AMPLIFIER 制造商:M/A-COM Technology Solutions 功能描述:RF Amp Chip Single Buffer Amp 11GHz 4V 16-Pin QFN EP T/R |
| XB1007-QT-0G0T | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN |
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