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參數(shù)資料
| 型號(hào)： | XB1008-BD-EV1 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 10.0-21.0 GHz GaAs MMIC Buffer Amplifier |
| 中文描述： | 10.0-21.0 GHz的砷化鎵單片緩沖放大器 |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大?。?/td> | 247K |
| 代理商： | XB1008-BD-EV1 |
Page 9 of 9
Handling and Assembly Information
CAUTION!
- Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body
and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy
- Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1)
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b)
support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component
of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
ESD
- Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices
need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment
- GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface
should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or
DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any
on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information
please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless
gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die
bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a
nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 oC
(Note: Gold Germanium should be avoided). The work station temperature should be 310 oC +/- 10 oC. Exposure to these
extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive
thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding
- Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold
bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon
with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are
acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended
though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and
ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All
bonds should be as short as possible.
Part Number for Ordering
XB1008-BD-000V
XB1008-BD-EV1
Description
Where “V” is RoHS compliant die packed in vacuum release gel paks
XB1008 die evaluation module
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier
B1008-BD
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
March 2007 - Rev 06-Mar-07
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XB1009-BD | 14.0-30.0 GHz GaAs MMIC Buffer Amplifier |
| XB1009-BD-000V | 14.0-30.0 GHz GaAs MMIC Buffer Amplifier |
| XB1009-BD-EV1 | 14.0-30.0 GHz GaAs MMIC Buffer Amplifier |
| XB1009-QT | 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN |
| XB1009-QT-0G00 | 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XB1008-QT | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN |
| XB1008-QT_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-21.0 GHz GaAs MMIC |
| XB1008-QT-0G00 | 制造商:M/A-COM Technology Solutions 功能描述:BUFFER AMPLIFIER - Bulk 制造商:M/A-COM Technology Solutions 功能描述:MMW BUFFER AMPLIFIER |
| XB1008-QT-0G0T | 制造商:M/A-COM Technology Solutions 功能描述:MMW BUFFER AMPLIFIER 制造商:M/A-COM Technology Solutions 功能描述:GAAS MMIC BUFFER AMPLIFIER, QFN 10.0-21.0 GHZ 制造商:M/A-COM Technology Solutions 功能描述:XB1008-QT-0G0T |
| XB1008-QT-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN |
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