參數(shù)資料
型號: XC17S15APD8C
廠商: Xilinx Inc
文件頁數(shù): 5/8頁
文件大小: 0K
描述: IC PROM SER 5000 C-TEMP 8-DIP
標準包裝: 50
可編程類型: OTP
存儲容量: 150kb
電源電壓: 3 V ~ 3.6 V
工作溫度: 0°C ~ 70°C
封裝/外殼: 8-DIP(0.300",7.62mm)
供應商設備封裝: 8-PDIP
包裝: 管件
Spartan-II/Spartan-IIE Family OTP Configuration PROMs (XC17S00A)
DS078 (v1.10) June 25, 2007
Product Specification
5
R
XC17S15A, XC17S30A, XC17S50A, XC17S100A, XC17S150A, XC17S200A, and
XC17S300A
Absolute Maximum Ratings(1)
Operating Conditions(1)
DC Characteristics Over Operating Condition
Symbol
Description
Value
Units
VCC
Supply voltage relative to GND
–0.5 to +4.0
V
VIN
Input voltage with respect to GND
–0.5 to VCC +0.5
V
VTS
Voltage applied to High-Z output
–0.5 to VCC +0.5
V
TSTG
Storage temperature (ambient)
–65 to +150
° C
Notes:
1.
Stresses beyond those listed under Absolute Maximum Ratings might cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions is not implied.
Exposure to Absolute Maximum Ratings conditions for extended periods of time might affect device reliability.
Symbol
Description
Min
Max
Units
VCC
Commercial
Supply voltage relative to GND (TA = 0° C to +70° C)
3.0
3.6
V
Industrial
Supply voltage relative to GND (TA = –40° C to +85° C)
3.0
3.6
V
TVCC
VCC rise time from 0V to nominal voltage
1.0
50
ms
Notes:
1.
During normal read operation, both VCC pins must be connected together.
2.
At power-up, the device requires the VCC power supply to monotonically rise from 0V to nominal voltage within the specified VCC rise time.
If the power supply cannot meet this requirement, then the device may not perform a power-on-reset properly.
Symbol
Description
Min
Max
Units
VIH
High-level input voltage
2.0
VCC
V
VIL
Low-level input voltage
0
0.8
V
VOH
High-level output voltage (IOH = –3 mA)
2.4
V
VOL
Low-level output voltage (IOL = +3 mA)
0.4
V
ICCA
Supply current, active mode (at maximum frequency)
15
mA
ICCS
Supply current, standby mode
1
m
Α
IL
Input or output leakage current
–10
10
μA
CIN
Input Capacitance (VIN = GND, f = 1.0 MHz)
10
pF
COUT
Output Capacitance (VIN = GND, f = 1.0 MHz)
10
pF
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