參數(shù)資料
型號(hào): XC2164A51F
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: RES .82 OHM 1/4W 5% 1206 SMD
中文描述: 集成電路與晶體振蕩器的使用
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 69K
代理商: XC2164A51F
ELECTRICAL CHARACTERISTICS (Continued)
XC2164A51T, V Fundamental
PARAMETER
3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta=30 ~ + 80
O
C)
CONDITIONS
MIN.
/INH=Open, Q0=Open
f=30MHz
/INH= " L ", Q0=Open
f=30MHz
XC2164A51M, V
XC2164A51T
XC2164A51M, V
XC2164A51T
XC2164A51M, V
XC2164A51T
XC2164A51M, V
XC2164A51T
* note 1 : the values for Cg, Cd are the designed values.
Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value (The designed value when 300MHz Crystal is used.)
OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE
VDD = 5.0 V,
±
10%
VDD = 3.3 V,
±
10%
±
4.3 ppm
±
4.5 ppm
M
V
T
±
7.0 ppm
VDD = 3.3V
- 130
- 150
VDD = 5.0V
- 220
- 250
- 660
- 760
3.30
2.5
NEGATIVE RESISTANCE VALUE
±
1.2 ppm
±
9.4 ppm
CMOS : 2.97V, IOH= - 8mA
CMOS : 2.97V, IOH=8mA
SYMBOL
±
2.1 ppm
Operating Supply Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
VDD
VIH
VIL
VOH
VOL
2.5
2.4
SYMBOL
TYP.
MAX.
3.63
UNITS
V
V
V
V
V
0.4
( 6.5 )
( 4 )
0.4
( 8 )
mA
Consumption Current 2
IDD2
2
2
Consumption Current 1
IDD1
5
4
μ
A
( 4 )
4.0
140
Input pull up resistance 1
Input pull up resistance 2
Rup1
Rup2
/INH="L"
/INH=0.7VDD
1.0
35
2.0
70
35
20
35
20
7.0
M
k
Internal Oscillation Capacitance
Cg
( * )
Cd
( * )
pF
Internal Oscillation Feedback Resistance
Output Diable Leakage Current
Rf
IOZ
10
μ
A
XC2164 Series
ICs for use with Crystal Oscillators
M
/INH="L"
Semiconductor Ltd.
5
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