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參數資料
| 型號： | XC2164A51RFCT |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | ICs for use with Crystal Oscillators |
| 中文描述： | 集成電路與晶體振蕩器的使用 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 69K |
| 代理商： | XC2164A51RFCT |
July 30, 2003 Ver. 5
ABSOLUTE MAXIMUM RATINGS
*When implemented on a glass epoxy PCB (SOT26 package)
ELECTRICAL CHARACTERISTICS
XC2164A51M, T, V Fundamental
PARAMETER
Operating Supply Voltage
5.0V Operation (unless otherwise stated, VDD=5.0V, No Load, Ta=30 ~ + 80
O
C)
MIN.
4.5
/INH=Open, Q0=Open
f=30MHz
/INH= " L ", Q0=Open
f=30MHz
/INH="L"
XC2164A51M, V
XC2164A51T
XC2164A51M, V
XC2164A51T
XC2164A51M, V
XC2164A51T
XC2164A51M, V
XC2164A51T
note 1 : the values for Cg, Cd are the designed values.
XC2164A51M Fundamental
3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta=30 ~ + 80
O
C)
MIN.
CONDITIONS
/INH=Open, Q0=Open
f=30MHz
/INH= " L ", Q0=Open
f=30MHz
XC2164A51M, V
XC2164A51T
XC2164A51M, V
XC2164A51T
XC2164A51M, V
XC2164A51T
XC2164A51M, V
XC2164A51T
* note 1 : the values for Cg, Cd are the designed values.
Cd
( * )
35
20
7.0
2
( 4 )
4.0
140
( * )
/INH=0.7VDD
35
20
2
( 4 )
2.4
MAX.
3.63
2.97
μ
A
35
20
Consumption Current 1
Consumption Current 2
IDD1
IDD2
/INH=0.7VDD
/INH="L"
CMOS : 2.97V, IOH= - 8mA
CMOS : 2.97V, IOH=8mA
Output Diable Leakage Current
VIH
VIL
Operating Supply Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
Internal Oscillation Feedback Resistance
Consumption Current 2
IDD2
Internal Oscillation Capacitance
Cg
Input pull up resistance 2
Consumption Current 1
IDD1
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
PARAMETER
Internal Oscillation Capacitance
Input pull up resistance 1
Input pull up resistance 2
Rup2
Rup1
CMOS : VDD -= 4.5V, IOH= - 16mA
CMOS : VDD = 4.5V, IOH=16mA
VIL
VOH
XC2164 Series
ICs for use with Crystal Oscillators
UNITS
V
V
V
V
V
TYP.
5.0
VIH
2.4
VDD
VOL
Output Disable Leakage Current
Internal Oscillation Feedback Resistance
Cd
Input pull up resistance 1
/INH="L"
Rup2
35
5
4
Rup1
1.0
2.0
70
VOH
VOL
2.5
Rf
IOZ
3.30
SYMBOL
VDD
TYP.
10
/INH="L"
Rf
IOZ
25
3.5
20
Cg
35
50
( * )
( * )
5
5
0.5
1.0
11
3.9
4.2
0.3
0.4
( 15 )
( 15 )
100
11
( 8 )
( 8 )
2.0
MAX.
5.5
SYMBOL
CONDITIONS
Tstg
O
C
-65 ~ +150 (Chip Form)
-55 ~ +125 (SOT-26)
V
V
SYMBOL
VDD
UNITS
CONDITIONS
Vss - 0.3 to Vss + 7.0
Vss - 0.3 to VDD + 0.3
VIN
Pd
250*
Storage Temperature
Topr
Operating Ambient
Temperature
-40 ~ +85
M
μ
A
μ
A
M
k
0.4
V
V
V
pF
mA
( 6.5 )
0.4
( 8 )
10
PARAMETER
Supply Voltage
Input Voltage
Continuous Total Power
Dissipation
O
C
mW
O
C
0.4
mA
M
k
pF
M
μ
A
UNITS
V
V
Semiconductor Ltd.
4
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