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參數(shù)資料
| 型號： | XC5210-3TQ176I |
| 英文描述： | Field Programmable Gate Array (FPGA) |
| 中文描述： | 現(xiàn)場可編程門陣列（FPGA） |
| 文件頁數(shù)： | 45/73頁 |
| 文件大小： | 598K |
| 代理商： | XC5210-3TQ176I |
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R
November 5, 1998 (Version 5.2)
7-127
XC5200 Series Field Programmable Gate Arrays
7
XC5200 Switching Characteristics
Definition of Terms
In the following tables, some specifications may be designated as Advance or Preliminary. These terms are defined as
follows:
Advance:
Initial estimates based on simulation and/or extrapolation from other speed grades, devices, or device
families. Use as estimates, not for production.
Preliminary:
Based on preliminary characterization. Further changes are not expected.
Unmarked:
Specifications not identified as either Advance or Preliminary are to be considered Final.
1
XC5200 Operating Conditions
XC5200 DC Characteristics Over Operating Conditions
XC5200 Absolute Maximum Ratings
1. Notwithstanding the definition of the above terms, all specifications are subject to change without notice.
Symbol
V
CC
Description
Min
4.75
4.5
2.0
0
70%
0
Max
5.25
5.5
V
CC
0.8
100%
20%
250
Units
V
V
V
V
V
CC
V
CC
ns
Supply voltage relative to GND Commercial: 0
°
C to 85
°
C junction
Supply voltage relative to GND Industrial: -40
°
C to 100
°
C junction
High-level input voltage — TTL configuration
Low-level input voltage — TTL configuration
High-level input voltage — CMOS configuration
Low-level input voltage — CMOS configuration
Input signal transition time
V
IHT
V
ILT
V
IHC
V
ILC
T
IN
Symbol
V
OH
V
OL
I
CCO
I
IL
C
IN
I
RIN
Note:
Description
Min
3.86
Max
Units
V
V
mA
μ
A
pF
mA
High-level output voltage @ I
OH
= -8.0 mA, V
CC
min
Low-level output voltage @ I
OL
= 8.0 mA, V
CC
max
Quiescent FPGA supply current (Note 1)
Leakage current
Input capacitance (sample tested)
Pad pull-up (when selected) @ V
IN
= 0V (sample tested)
1. With no output current loads, all package pins at Vcc or GND, either TTL or CMOS inputs, and the FPGA configured with a
tie option.
0.4
15
+10
15
0.30
-10
0.02
Symbol
V
CC
V
IN
V
TS
T
STG
T
SOL
T
J
Description
Units
V
V
V
°
C
°
C
°
C
°
C
Supply voltage relative to GND
Input voltage with respect to GND
Voltage applied to 3-state output
Storage temperature (ambient)
Maximum soldering temperature (10 s @ 1/16 in. = 1.5 mm)
Junction temperature in plastic packages
Junction temperature in ceramic packages
Note:
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those listed under Recommended
Operating Conditions is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time may
affect device reliability.
-0.5 to +7.0
-0.5 to V
CC
+0.5
-0.5 to V
CC
+0.5
-65 to +150
+260
+125
+150
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