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  • 參數(shù)資料
    型號(hào): XC6102F623
    廠商: TOREX SEMICONDUCTOR LTD.
    英文描述: CMOS Voltage Detector
    中文描述: CMOS電壓檢測(cè)器
    文件頁(yè)數(shù): 12/26頁(yè)
    文件大小: 535K
    代理商: XC6102F623
    XC6101~XC6107, XC6111~XC6117 Series
    12/26
    OPERATIONAL EXPLANATION
    The XC6101~XC6107, XC6111~XC6117 series compare, using the error amplifier, the voltage of the internal voltage
    reference source with the voltage divided by R1, R2 and R3 connected to the V
    IN
    pin. The resulting output signal from the
    error amplifier activates the watchdog logic, manual reset logic, delay circuit and the output driver. When the V
    IN
    pin voltage
    gradually falls and finally reaches the detect voltage, the RESETB pin output goes from high to low in the case of the V
    DFL
    type
    ICs, and the RESET pin output goes from low to high in the case of the V
    DFH
    type ICs.
    <RESETB / RESET Pin Output Signal>
    * V
    DFL
    (RESETB) type - output signal: Low when detected.
    The RESETB pin output goes from high to low whenever the V
    IN
    pin voltage falls below the detect voltage, or whenever the
    MRB pin is driven from high to low. The RESETB pin remains low for the release delay time (T
    DR
    ) after the V
    IN
    pin voltage
    reaches the release voltage. If neither rising nor falling signals are applied to the WD pin within the watchdog timeout period,
    the RESETB pin output remains low for the release delay time (T
    DR
    ), and thereafter the RESET pin outputs high level signal.
    * V
    DFH
    (RESET) type – output signal: High when detected.
    The RESET pin output goes from low to high whenever the V
    IN
    pin voltage falls below the detect voltage, or whenever the
    MRB pin is driven from high to low. The RESET pin remains high for the release delay time (T
    DR
    ) after the V
    IN
    pin voltage
    reaches the release voltage. If neither rising nor falling signals are applied to the WD pin within the watchdog timeout period,
    the V
    OUT
    pin output remains high for the release delay time (T
    DR
    ), and thereafter the RESET pin outputs low level signal.
    <Hysteresis>
    When the internal comparator output is high, the NMOS transistor connected in parallel to R3 is turned ON, activating the
    hysteresis circuit. The difference between the release and detect voltages represents the hysteresis range, as shown by the
    following calculations:
    V
    DF
    (detect voltage) = (R1+R2+R3) x Vref(R2+R3)
    V
    DR
    (release voltage) = (R1+R2) x Vref(R2)
    V
    HYS
    (hysteresis range)=V
    DR
    -V
    DF
    (V)
    V
    DR
    > V
    DF
    * Detect voltage (V
    DF
    ) includes conditions of both V
    DFL
    (low when detected) and V
    DFH
    (high when detected).
    * Please refer to the block diagrams for R1, R2, R3 and Vref.
    Hysteresis range is selectable from V
    DF
    x 0.05V (XC6101~XC6107) or V
    DF
    x 0.001V (XC6111~XC6117).
    <Watchdog (WD) Pin>
    The XC6101~XC6107, XC6111~XC6117 series use a watchdog timer to detect malfunction or “runaway” of the
    microprocessor. If neither rising nor falling signals are applied from the microprocessor within the watchdog timeout period,
    the RESETB/RESET pin output maintains the detection state for the release delay time (T
    DR
    ), and thereafter the
    RESET/RESETB pin output returns to the release state (Please refer to the FUNCTION CHART). The timer in the watchdog
    is then restarted
    .
    Six watchdog timeout period settings are available in 1.6sec, 400msec, 200msec, 100msec, 50msec,
    6.25msec.
    <MRB Pin>
    Using the MRB pin input, the RESET/RESETB pin signal can be forced to the detection state. When the MRB pin is driven
    from high to low, the RESETB pin output goes from high to low in the case of the V
    DFL
    type ICs, and the RESET pin output
    goes from low to high in the case of the V
    DFH
    type. Even after the MRB pin is driven back high, the RESET/RESETB pin
    output maintains the detection state for the release delay time (T
    DR
    ). Since the MRB pin is internally pulled up to the V
    IN
    pin
    voltage level, leave the MRB pin open if unused (Please refer to the FUNCTION CHART). A diode, which is an input
    protection element, is connected between the MRB pin and V
    IN
    pin. Therefore, if the MRB pin is applied voltage that exceeds
    V
    IN
    , the current will flow to V
    IN
    through the diode. Please use this IC within the stated maximum ratings (V
    SS
    -0.3 ~ V
    IN
    +0.3)
    on the MRB
    pin.
    <Release Delay Time>
    Release delay time (T
    DR
    ) is the time that elapses from when the V
    IN
    pin reaches the release voltage, or when the watchdog
    timeout period expires with no rising signal applied to the WD pin, until the RESET/RESETB pin output is released from the
    detection state. Seven release delay time (T
    DR
    ) watchdog timeout period settings are available in 1.6sec, 400msec,
    200msec, 100msec, 50msec, 25msec, 3.13msec.
    <Detect Delay Time>
    Detect Delay Time (T
    DF
    ) is the time that elapses from when the V
    IN
    pin voltage falls to the detect voltage until the RESET/
    RESETB pin output goes into the detection state.
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