參數(shù)資料
    型號(hào)： XC6116D638
    廠商： TOREX SEMICONDUCTOR LTD.
    英文描述： CMOS Voltage Detector
    中文描述： CMOS電壓檢測(cè)器
    文件頁數(shù)： 10/26頁
    文件大?。?/td> 535K
    代理商： XC6116D638
    XC6101~XC6107, XC6111~XC6117 Series
    10/26
    NOTE:
    *1: XC6101~XC6107 (with hysteresis)
    *2: XC6111~XC6117 (without hysteresis)
    *3: ‘X’ represents both ‘0’ and ‘1’. (ex. XC61X1
    XC6101 and XC6111)
    *4: V
    DF(T)
    : Setting detect voltage
    *5: If only “V
    DF
    ” is indicated, it represents both V
    DFL
    (low when detected) and V
    DFH
    (high when detected).
    PARAMETER
    Detect Voltage
    Hysteresis Range
    XC6101~XC6107 (*1)
    Hysteresis Range
    XC6111~XC6117 (*2)
    SYMBOL
    V
    DFL
    V
    DFH
    V
    HYS
    CONDITIONS
    MIN.
    V
    DF(T)
    × 0.98
    V
    DF
    × 0.02
    0
    TYP.
    V
    DF(T)
    V
    DF
    × 0.05
    V
    DF
    × 0.001
    5
    10
    12
    4
    8
    10
    -
    0.5
    2.5
    3.5
    4.0
    MAX.
    V
    DF(T)
    × 1.02
    V
    DF
    × 0.08
    V
    DF
    x 0.01
    11
    16
    18
    10
    14
    16
    6.0
    -
    -
    -
    -
    UNITS
    CIRCUIT
    V
    1
    V
    1
    V
    HYS
    V
    1
    V
    IN
    =V
    DF(T)
    ×0.9V
    -
    -
    -
    -
    -
    -
    V
    IN
    =V
    DF(T)
    ×1.1V
    V
    IN
    =6.0V
    XC61X1/XC61X2/XC61X3
    XC61X4/XC61X5 (*3)
    (The MRB & the WD Pin:
    No connection)
    V
    IN
    =V
    DF(T)
    ×0.9V
    V
    IN
    =V
    DF(T)
    ×1.1V
    V
    IN
    =6.0V
    Supply Current
    I
    SS
    XC61X6/XC61X7 (*3)
    (The MRB Pin:
    No connection)
    μ
    A
    2
    Operating Voltage
    V
    IN
    1.0
    0.15
    2.0
    3.0
    3.5
    V
    1
    VIN=1.0V
    V
    IN
    =2.0V (V
    DFL(T)
    > 2.0V)
    V
    IN
    =3.0V (V
    DFL(T)
    >3.0V)
    V
    IN
    =4.0V (V
    DFL(T)
    >4.0V)
    N-ch.
    V
    DS
    = 0.5V
    3
    V
    DFL
    Output Current
    (RESETB)
    I
    RBOUT
    CMOS,
    P-ch
    V
    DS
    = 0.5V
    N-ch
    V
    DS
    = 0.5V
    V
    IN
    =6.0V
    -
    - 1.1
    -0.8
    mA
    4
    V
    IN
    =6.0V
    4.4
    4.9
    -
    3
    V
    IN
    =1.0V
    -
    -
    -
    -
    - 0.08
    - 0.50
    - 0.75
    - 0.95
    - 0.02
    - 0.30
    - 0.55
    - 0.75
    V
    IN
    =2.0V (V
    DFH(T)
    > 2.0V)
    V
    IN
    =3.0V (V
    DFH(T)
    >3.0V)
    V
    IN
    =4.0V (V
    DFH(T)
    >4.0V)
    -40
    O
    C < Topr < 85
    O
    C
    V
    DFH
    Output Current
    (RESET)
    I
    ROUT
    P-ch.
    V
    DS
    = 0.5V
    mA
    4
    Temperature
    Characteristics
    △
    V
    DF
    /
    △
    Topr
    V
    DF
    -
    +100
    -
    ppm
    /
    O
    C
    1
    2
    13
    25
    60
    120
    240
    960
    2
    13
    25
    60
    120
    240
    960
    3.13
    25
    50
    100
    200
    400
    1600
    3.13
    25
    50
    100
    200
    400
    1600
    5
    38
    75
    140
    280
    560
    2240
    5
    38
    75
    140
    280
    560
    2240
    Release Delay Time
    (V
    DF
    <1.8V)
    T
    DR
    Time until V
    IN
    is increased from
    1.0V to 2.0V
    and attains to the release
    time level,
    and the Reset output pin inverts.
    ms
    5
    Release Delay Time
    (V
    DF
    >1.9V)
    T
    DR
    Time until V
    IN
    is increased from
    1.0V to (V
    DF
    x1.1V)
    and attains to the release
    time level,
    and the Reset output pin inverts.
    ms
    5
    Detect Delay Time
    T
    DF
    Time until V
    IN
    is decreased from 6.0V to
    1.0V and attains to the detect voltage
    level, and the Reset output pin detects
    while the WD pin left opened.
    -
    3
    30
    μ
    s
    5
    V
    DFL
    /V
    DFH
    CMOS Output
    Leak Current
    V
    DFL
    N-ch Open Drain
    Output
    Leak Current
    I
    LEAK
    V
    IN
    =6.0V, RESETB=6.0V (V
    DFL
    )
    V
    IN
    =6.0V, RESET=0V (V
    DFH
    )
    -
    0.01
    -
    μ
    A
    3
    I
    LEAK
    V
    IN
    =6.0V, RESETB=6.0V
    -
    0.01
    0.10
    μ
    A
    3
    ■
    ELECTRICAL CHARACTERISTICS
    ●
    XC6101~XC6107, XC6111~XC6117 Series
    Ta = 25
    O
    C
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