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參數(shù)資料
| 型號： | XC641A |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | CMOS Low Power Consumption |
| 中文描述： | CMOS低功耗 |
| 文件頁數(shù)： | 8/20頁 |
| 文件大?。?/td> | 297K |
| 代理商： | XC641A |
656
10
Voltage Detector 1
Ta=25
°
C
CIRCUIT
4
PARAMETER
Detect Voltage
SYMBOL
V
DF
CONDITIONS
V
IN
= V
IN
DEF
MIN
3.332
TYP
3.4
MAX
3.468
UNITS
V
Hysteresis Range
V
HYS
V
IN
= V
IN
DEF
V
DF
x 0.05
V
4
x 0.02
x 0.08
Input Current
I
IN
V
IN
= V
IN
DEF
0.8
1.4
μ
A
4
Output Current
I
OUT
Nch V
DS
= 0.5V
6.0
11.5
mA
3
V
IN
= V
IN
DEF
Detect Voltage
Temperature Characteristics
V
DF
±
100
ppm/
°
C
4
Topr
V
OUT
Voltage Detector 2
Ta=25
°
C
CIRCUIT
4
PARAMETER
Detect Voltage
SYMBOL
V
DF
CONDITIONS
V
IN
= V
IN
DEF
MIN
2.450
TYP
2.5
MAX
2.550
UNITS
V
Hysteresis Range
V
HYS
V
IN
= V
IN
DEF
V
DF
x 0.05
V
4
x 0.02
x 0.08
Input Current
I
IN
V
IN
= V
IN
DEF
0.8
1.4
μ
A
4
Output Current
I
OUT
Nch V
DS
= 0.5V
6.0
11.5
mA
3
V
IN
= V
IN
DEF
Delay Circuit Current
I
CDO
V
DF
V
IN
= V
IN
DEF
0.25
0.50
0.80
μ
A
5
Detect Voltage
Temperature Characteristics
±
100
ppm/
°
C
4
Topr
V
OUT
Note :
The delay circuit current is controlled by the set current circuit within the IC.
Delay time depends upon the capacity of the external condensor. Approximate delay time can be calculated using the following formula :
TD ( msec ) = 1.8 x C ( nF )
Input Pin
Ta=25
°
C
CIRCUIT
1
PARAMETER
EN 'High Level' Voltage
SYMBOL
V
ENH
CONDITIONS
MIN
1.3
TYP
MAX
UNITS
V
EN 'Low Level' Voltage
V
ENL
0.4
V
μ
A
μ
A
1
EN 'High Level' Current
I
ENH
0.1
1
EN 'Low Level' Voltage
I
ENL
-0.5
0
1
Entire Circuit
Ta=25
°
C
CIRCUIT
2
PARAMETER
Supply Current
( Stand-By )
SYMBOL
I
SS
CONDITIONS
MIN
TYP
25
MAX
37.5
UNITS
μ
A
μ
A
V
IN
= 8V, No Load
I
STB
V
IN
= 8V, V
R
1 = V
R
2 = V
R
3 = OFF
6.0
9.0
2
Note :
The supply current (I
SS
) value of the entire IC is the IC's internal supply current value.
( This does not include current flowing through externally connected components nor
the input current through the detect pins of voltage detectors 1, 2 )
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