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參數(shù)資料
| 型號(hào)： | XC651A |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | CMOS Low Power Consumption |
| 中文描述： | CMOS低功耗 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 216K |
| 代理商： | XC651A |
677
10
3. VD 1
V
DF
1=1.5V
SYMBOL
Ta=25
O
C
CIRCUIT
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Detect Voltage VD1
V
DF
1
1.470 1.500 1.530
V
5
Hysteresis Width VD1
V
HYS
1
(Release Voltage=V
DF
1 x (1 + V
HYS
1
/ 100) )
2
-
8
%
5
Supply Current
I
SS
1
V
IN
1=2.0V
-
1.5
3.0
μ
A
6
Operating Voltage
V
IN
1
0.7
-
6.0
V
-
Output Current V
DET
1
I
OUT
1
N-ch VDS=0.5V, V
IN
1=0.9V
0.22
2.2
-
mA
7
4. VD 2
V
DF
2=0.95V
SYMBOL
Ta=25
O
C
CIRCUIT
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Detect Voltage VD2
V
DF
2
0.931 0.950 0.969
V
5
Hysteresis Width VD2
V
HYS
2
(Release Voltage=V
DF
2 x (1 + V
HYS
2
/ 100) )
2
-
8
%
5
Supply Current
I
SS
2
V
IN
2=2.0V
-
1.5
3.0
μ
A
6
Operating Voltage
V
IN
2
0.7
-
6.0
V
-
Output Current V
DET2
I
OUT
2
N-ch V
DS
=0.5V, V
IN
2=0.9V
0.18
1.8
-
mA
7
Delay Time V
DET2
T
DLY
2
Release Voltage Output Inversion
-
-
0.2
msec
8
50
100
msec
8
V
DET
1 H L Delay Time
T
HL
1
CD=3.3
μ
F, V
IN
1=V
DF
1 x 1.1 V
DF
1 x 0.9
20
1000
2000
msec
8
V
DET
1 L H Delay Time
T
LH
1
CD=3.3
μ
F, V
IN
1=V
DF
1 x 0.9 V
DF
1 x 1.1
500
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