參數(shù)資料
型號: XC6VCX130T-2FFG784C
廠商: Xilinx Inc
文件頁數(shù): 19/52頁
文件大?。?/td> 0K
描述: IC FPGA VIRTEX 6 128K 784FFGBGA
產(chǎn)品培訓模塊: Virtex-6 FPGA Overview
產(chǎn)品變化通告: Virtex-6 FIFO Input Logic Reset 18/Apr/2011
標準包裝: 1
系列: Virtex® 6 CXT
LAB/CLB數(shù): 10000
邏輯元件/單元數(shù): 128000
RAM 位總計: 9732096
輸入/輸出數(shù): 400
電源電壓: 0.95 V ~ 1.05 V
安裝類型: 表面貼裝
工作溫度: 0°C ~ 85°C
封裝/外殼: 784-BBGA,F(xiàn)CBGA
供應商設備封裝: 784-FCBGA
Virtex-6 CXT Family Data Sheet
DS153 (v1.6) February 11, 2011
Product Specification
26
IOB Pad Input/Output/3-State Switching Characteristics
Table 38 summarizes the values of standard-specific data
input delay adjustments, output delays terminating at pads
(based on standard) and 3-state delays.
TIOPI is described as the delay from IOB pad through the
input buffer to the I-pin of an IOB pad. The delay varies
depending on the capability of the SelectIO input buffer.
TIOOP is described as the delay from the O pin to the IOB
pad through the output buffer of an IOB pad. The delay
varies depending on the capability of the SelectIO output
buffer.
TIOTP is described as the delay from the T pin to the IOB
pad through the output buffer of an IOB pad, when 3-state is
disabled. The delay varies depending on the SelectIO
capability of the output buffer.
Table 39 summarizes the value of TIOTPHZ. TIOTPHZ is
described as the delay from the T pin to the IOB pad
through the output buffer of an IOB pad, when 3-state is
enabled (i.e., a high impedance state).
Table 38: IOB Switching Characteristics
I/O Standard
TIOPI
TIOOP
TIOTP
Units
Speed Grade
-2
-1
-2
-1
-2
-1
LVDS_25
1.09
1.68
ns
LVDSEXT_25
1.09
1.84
ns
HT_25
1.09
1.78
ns
BLVDS_25
1.09
1.67
ns
RSDS_25 (point to point)
1.09
1.68
ns
HSTL_I
1.06
1.73
ns
HSTL_II
1.06
1.74
ns
HSTL_III
1.06
1.71
ns
HSTL_I_18
1.06
1.75
ns
HSTL_II_18
1.06
1.81
ns
HSTL_III_18
1.06
1.71
ns
SSTL2_I
1.06
1.77
ns
SSTL2_II
1.06
1.72
ns
SSTL15
1.06
1.71
ns
LVCMOS25, Slow, 2 mA
0.66
6.01
ns
LVCMOS25, Slow, 4 mA
0.66
3.79
ns
LVCMOS25, Slow, 6 mA
0.66
3.08
ns
LVCMOS25, Slow, 8 mA
0.66
2.72
ns
LVCMOS25, Slow, 12 mA
0.66
2.17
ns
LVCMOS25, Slow, 16 mA
0.66
2.29
ns
LVCMOS25, Slow, 24 mA
0.66
2.02
ns
LVCMOS25, Fast, 2 mA
0.66
6.04
ns
LVCMOS25, Fast, 4 mA
0.66
3.82
ns
LVCMOS25, Fast, 6 mA
0.66
2.99
ns
LVCMOS25, Fast, 8 mA
0.66
2.65
ns
LVCMOS25, Fast, 12 mA
0.66
2.08
ns
LVCMOS25, Fast, 16 mA
0.66
2.13
ns
LVCMOS25, Fast, 24 mA
0.66
1.99
ns
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