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參數(shù)資料
| 型號： | XD010-04S-D4FY |
| 廠商： | SIRENZA MICRODEVICES INC |
| 元件分類： | 放大器 |
| 英文描述： | 350 MHz - 600 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | GREEN, D4F, 4 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 142K |
| 代理商： | XD010-04S-D4FY |
XD010-04S-D4F 350-600 MHz 12W Power Amp Module
303 S. Technology Court
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
2
EDS-104259 Rev E
Pin Description
Pin #
Function
Description
1
RF Input
Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be
taken to protect against video transients that may damage the active devices.
2VD1
This is the drain voltage for the first stage. Nominally +28Vdc
3VD2
This is the drain voltage for the 2nd stage of the amplifier module. The 2nd stage gate bias is temperature compensated to
maintain constant quiscent drain current over the operating temperature range. See Note 1.
4
RF Output
Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be
taken to protect against video transients that may damage the active devices.
Flange
Gnd
Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the board for
optimum thermal and RF performance. See mounting instructions in application note AN-060 on Sirenza’s web site.
Simplified Device Schematic
Absolute Maximum Ratings
Parameters
Value
Unit
1st Stage Bias Voltage (VD1 )35
V
2nd Stage Bias Voltage (VD2)35
V
RF Input Power
+20
dBm
Load Impedance for Continuous Operation With-
out Damage
5:1
VSWR
Output Device Channel Temperature
+200
C
Operating Temperature Range
-20 to +90
C
Storage Temperature Range
-40 to +100
C
Operation of this device beyond any one of these limits may cause per-
manent damage. For reliable continuous operation see typical setup val-
ues specified in the table on page one.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
Note 1:
The internally generated gate voltage is thermally compen-
sated to maintain constant quiescent current over the temper-
ature range listed in the data sheet. No compensation is
provided for gain changes with temperature. This can only be
accomplished with AGC external to the module.
Note 2:
Internal RF decoupling is included on all bias leads. No addi-
tional bypass elements are required, however some applica-
tions may require energy storage on the drain leads to
accommodate time-varying waveforms.
Note 3:
This module was designed to have its leads hand soldered to
an adjacent PCB. The maximum soldering iron tip tempera-
ture should not exceed 700° F, and the soldering iron tip
should not be in direct contact with the lead for longer than 10
seconds. Refer to app note AN060 (www.sirenza.com) for fur-
ther installation instructions.
Temperature
Compensation
Bias
Network
V
D2
D1
V
RF
1
Q1
Q2
2
3
4
Case Flange = Ground
in
out
RF
Quality Specifications
Parameter
Unit
Typical
ESD Rating
Human Body Model, JEDEC Document - JESD22-A114-B
V
8000
MTTF
85oC Leadframe, 200oC Channel
Hours
1.2 X 106
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| XD010-12S-D4F | 制造商:RF Micro Devices Inc 功能描述:MODULE POWER AMP LDMOS 10W AB |
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| XD010-22S-D2F | 制造商:RF Micro Devices Inc 功能描述:MODULE POWER AMP LDMOS 10W A/AB |
| XD010-24S-D2F | 制造商:RF Micro Devices Inc 功能描述:MODULE POWER AMP LDMOS 10W A/AB |
| XD010-42S-D4F | 制造商:RF Micro Devices Inc 功能描述:MODULE POWER AMP LDMOS 10W A |
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