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參數(shù)資料
| 型號： | XD1001 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 18.0-50.0 GHz GaAs MMIC Distributed Amplifier |
| 中文描述： | 18000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | DIE-4 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 318K |
| 代理商： | XD1001 |
Mimix Broadband
’
s 18.0-50.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 17.0 dB
with a noise figure of 5.0 dB across the band. The
device also includes 30.0 dB gain control and a +15
dBm P1dB compression point. This MMIC uses Mimix
Broadband
’
s 0.15
μ
m GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for microwave, millimeter-wave, wideband
military, and fiber optic applications.
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
May 2005 - Rev 01-May-05
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
Page 1 of 6
Features
Ultra Wide Band Driver Amplifier
Fiber Optic Modulator Driver
17.0 dB Small Signal Gain
5.0 dB Noise Figure
30 dB Gain Control
+15.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
+6.0 VDC
220 mA
+0.3 VDC
+15 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(2) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
2
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (
S21)
Gain Control
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd)
Gain Control Bias (Vg)
Supply Current (Id) (Vd=5.0V, Vg=0.0 Typical)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
18.0
-
-
-
-
-
-
-
-
-
-
-2.0
-
Typ.
-
10.0
11.0
17.0
+/-1.0
30.0
40.0
5.0
+15.0
+24.0
+5.0
0.0
160
Max.
50.0
-
-
-
-
-
-
-
-
-
+5.5
+.01
190
(1) Measured using constant current.
1
1
2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
D1001
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XD1001_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-50.0 GHz GaAs MMIC |
| XD1001000-01 | 功能描述:網(wǎng)絡(luò)模塊 XPort Direct Device Gateway Module RoHS:否 制造商:Digi International 產(chǎn)品:ZigBee to Ethernets 處理器類型: 頻率: 隨機(jī)存取存儲器: 閃光: 數(shù)據(jù)速率: 接口類型:Ethernet, RF 工作電源電壓:5 V 最大工作溫度:+ 40 C 尺寸:70 mm x 95 mm x 32 mm |
| XD100100K-01 | 功能描述:網(wǎng)絡(luò)開發(fā)工具 XPort Direct Device Gateway Module Kit RoHS:否 制造商:Rabbit Semiconductor 產(chǎn)品:Development Kits 類型:Ethernet to Wi-Fi Bridges 工具用于評估:RCM6600W 數(shù)據(jù)速率:20 Mbps, 40 Mbps 接口類型:802.11 b/g, Ethernet 工作電源電壓:3.3 V |
| XD100100S-01 | 功能描述:網(wǎng)絡(luò)模塊 XPort Direct Device Gateway Mod Sample RoHS:否 制造商:Digi International 產(chǎn)品:ZigBee to Ethernets 處理器類型: 頻率: 隨機(jī)存取存儲器: 閃光: 數(shù)據(jù)速率: 接口類型:Ethernet, RF 工作電源電壓:5 V 最大工作溫度:+ 40 C 尺寸:70 mm x 95 mm x 32 mm |
| XD1001-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-50.0 GHz GaAs MMIC Distributed Amplifier |
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