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參數(shù)資料
| 型號： | XL1225 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | The XL1225/ML1225 silicon controlled rectifiers |
| 中文描述： | 在XL1225/ML1225可控硅整流器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 15K |
| 代理商： | XL1225 |
XL/ML1225
SCR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
DESCRIPTION
The XL1225/ML1225 silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts
are intended for low cost high volume applications.
TO-92
1
1:CATHODE 2:GATE 3:ANODE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETERS
PART NO.
SYMBOL
TEST
CONDITION
Tj=40 to 125
°
C
(rgk=1k
)
Tc=40
°
C
Half Cycle=180,
Tc=40
°
C
IGR=10uA
10us Max.
20ms Max.
MIN.
RATING
400
300
0.8
0.5
MAX.
RATING
UNITS
Repetitive Peak Off-State Voltage
XL1225
ML1225
V
DRM
V
DRM
IT(RMS)
IT(AV)
V
On-State Current
Average On-State Current
A
A
Peak Reverse Gate Voltage
Peak Gate Current
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
VG
RM
IGM
PG(AV)
Tj
T
STG
T
SLD
1
V
A
W
°
C
°
C
°
C
0.1
150
-40
-40
125
125
250
1.6mm from case
10s Max.
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C,unless otherwise specified)
PARAMETER
SYMBOL
Off state leakage current
IDRM
Off state leakage current
IDRM
On state voltage
TEST CONDITIONS
@V
DRM(RGK
=1K
), Tj=125
°
C
@V
DRM(RGK
=1K
), Tj=25
°
C
AT IT=0.4A
AT IT=0.8A
Tj=125
°
C
Tj=125
°
C
VD=7V
VD=7V
RGK=1K
RGK=1K
VD=0.67*VDRM(RGK=1K
),
Tj=125
°
C
IG=10mA, dIG/dt=0.1A/
μ
s,
Tj=125
°
C
IG=10mA, dIG/dt=0.1A/
μ
s,
Tj=85
°
C, VD=0.67*VDRM,
VR=35V, IT=IT(AV)
MIN
MAX
0.1
1.0
1. 4
2.2
0.95
600
200
0.8
5
6
UNIT
mA
μ
A
V
VT
On state threshold voltage
On state slops resistance
Gate trigger current
Gate trigger voltage
Holding current
Latching current
Critical rate of voltage rise
VT(TO)
Rt
IGT
VGT
IH
IL
DV/DT
V
m
μ
A
V
mA
mA
V/
μ
s
Critical rate of current rise
DV/DT
A/
μ
s
Gate controlled delay time
Commutated turn-off time
TGD
TG
500
200
μ
s
μ
s
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