參數(shù)資料
型號: XM28C020PM-20
英文描述: 5 Volt, Byte Alterable E2PROM
中文描述: 5伏,可變E2PROM的字節(jié)
文件頁數(shù): 11/16頁
文件大小: 74K
代理商: XM28C020PM-20
XM28C020
11
A.C. CONDITIONS OF TEST
Input Pulse Levels
Input Rise and
Fall Times
Input and Output
Timing Levels
Output Load
0V to 3V
10ns
1.5V
1 TTL Gate and
C
L
= 100pF
3872 PGM T05.1
3872 FHD F03
MODE SELECTION
CE
OE
WE
Mode
I/O
Power
L
L
H
X
X
L
H
X
L
X
H
L
X
X
H
Read
Write
Standby and Write Inhibit
Write Inhibit
Write Inhibit
D
OUT
D
IN
High Z
Active
Active
Standby
3872 PGM T06
A.C. CHARACTERISTICS
XM28C020 T
A
= 0
°
C to +75
°
C, V
CC
= +5V
±
10%, unless otherwise specified.
XM28C020I T
A
= –40
°
C to +85
°
C, V
CC
= +5V
±
10%, unless otherwise specified.
XM28C020M T
A
= –55
°
C to +125
°
C, V
CC
= +5V
±
10%, unless otherwise specified.
Read Cycle Limits
XM28C020-15
Min.
150
XM28C020-20
Min.
200
XM28C020-25
Min.
250
Symbol
t
RC
t
CE
t
AA
t
OE
t
LZ(3)
t
OLZ(3)
t
HZ(4)
t
OHZ(4)
OE
High to High Z Output
t
OH
Output Hold From Address Change
Parameter
Max.
Max.
Max.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
3872 PGM T07.1
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE
Low to Active Output
OE
Low to Active Output
CE
High to High Z Output
150
150
70
200
200
80
250
250
100
0
0
0
0
0
0
100
100
100
100
100
100
0
0
0
Read Cycle
tCE
tRC
ADDRESS
CE
OE
WE
DATA VALID
DATA VALID
tOE
tLZ
tOLZ
tOH
tAA
tHZ
tOHZ
DATA I/O
VIH
HIGH Z
Note:
(3) t
LZ
and t
OLZ
are shown for reference only, they are periodically characterized and are not 100% tested.
(4) t
HZ
and t
OHZ
are measured from the point when
CE
or
OE
return high (whichever occurs first) to the time when the outputs are
no longer driven.
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