參數(shù)資料
型號: XN06543(XN6543)
英文描述: Composite Device - Composite Transistors
中文描述: 復(fù)合設(shè)備-復(fù)合晶體管
文件頁數(shù): 1/3頁
文件大?。?/td> 84K
代理商: XN06543(XN6543)
1
Publication date: August 2003
SJJ00108BED
Composite Transistors
XN06501
(XN6501)
Silicon NPN epitaxial planar type
For general amplification
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SD0601A (2SD601A)
×
2
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 5N
5
4
3
2
1
6
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
V
CBO
V
CEO
V
EBO
I
C
60
50
7
100
V
V
V
mA
Peak collector current
I
CP
200
mA
Total power dissipation
P
T
T
j
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
V
CE
=
10 V, I
C
=
2 mA
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
7
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
100
Forward current transfer ratio
h
FE
ratio
*
h
FE
160
460
h
FE(Small/
0.50
0.99
Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.1
0.3
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
3.5
pF
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
2.90
1.9
±
0.1
(0.95)
0.16
+0.10
2
+
1
+
1
0
+
1
0
±
0
0
±
0
+
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
10
相關(guān)PDF資料
PDF描述
XN0A311 Composite Device - Composite Transistors
XN1A311 Composite Device - Composite Transistors
XN0A311(XN1A311) 複合デバイス - 複合トランジスタ
XN0A312(XN1A312) 複合デバイス - 複合トランジスタ
XN0B301 Composite Device - Composite Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
XN06776 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 複合トランジスタ
XN06877 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 100MA I(D) | SC-74
XN07651 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN/PNP epitaxial planer transistor
XN09D57 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD)
XN09D5700L 功能描述:TRANS PNP 15VCEO 2.5A MINI 6P RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR