參數(shù)資料
型號(hào): XN6501
英文描述: Composite Device - Composite Transistors
中文描述: 復(fù)合設(shè)備-復(fù)合晶體管
文件頁(yè)數(shù): 2/3頁(yè)
文件大小: 84K
代理商: XN6501
XN06501
2
SJJ00108BED
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
P
T
T
a
I
C
V
CE
I
C
I
B
h
FE
I
C
f
T
I
E
NV
I
C
0
160
40
120
80
0
500
200
400
100
300
T
T
Ambient temperature T
a
(
°
C)
0
0
10
2
4
8
6
60
50
40
30
20
10
C
C
Collector-emitter voltage V
CE
(V)
T
a
=
25
°
C
I
B
=
160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
20
μ
A
0
0
1.0
0.8
0.6
0.4
0.2
Base current I
B
(mA)
240
200
160
120
80
40
C
C
V
CE
=
10 V
T
a
=
25
°
C
0
0
1.0
0.8
0.6
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
Base-emitter voltage V
BE
(V)
B
B
V
CE
=
10 V
T
a
=
25
°
C
0
0
2.0
1.6
1.2
0.8
0.4
240
200
160
120
80
40
Base-emitter voltage V
BE
(V)
C
C
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
C
C
Collector current I
C
(mA)
10
2
10
1
10
1
1
10
10
2
1
10
10
2
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
10
1
600
500
400
300
200
100
F
F
Collector current I
C
(mA)
1
10
10
2
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
10
1
300
240
180
120
60
T
T
Emitter current I
E
(mA)
–1
–10
–10
2
V
CB
=
10 V
T
a
=
25
°
C
0
240
200
160
120
80
40
N
Collector current I
C
(
μ
A)
10
10
2
10
3
V
CE
=
10 V
G
=
80 dB
Function
=
FLAT
T
a
=
25
°
C
4.7 k
R
g
=
100 k
22 k
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