參數(shù)資料
型號(hào)： XP05601(XP5601)
英文描述： Composite Device - Composite Transistors
中文描述： 復(fù)合設(shè)備-復(fù)合晶體管
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 136K
代理商： XP05601(XP5601)
XP05601
3
SJJ00197BED
Characteristics charts of Tr1
I
C
V
CE
I
C
I
B
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
NF
I
E
0
0
4
8
12
16
60
50
40
30
20
10
C
C
Collector-emitter voltage V
CE
(V)
T
a
=
25
°
C
I
B
=
300
μ
A
250
μ
A
200
μ
A
150
μ
A
100
μ
A
50
μ
A
0
0
100
Base current I
B
(
μ
A)
200
300
400
60
50
40
30
20
10
C
C
V
CE
=
5 V
T
a
= 25
°
C
0
0
0.4
0.8
1.2
1.6
400
350
300
250
200
150
100
50
Base-emitter voltage V
BE
(V)
B
B
μ
A
V
CE
=
–5 V
T
a
=
25
°
C
0
0
2.0
1.6
1.2
0.8
0.4
240
200
160
120
80
40
Base-emitter voltage V
BE
(V)
C
C
V
CE
=
5 V
T
a
=
75
°
C
25
°
C
25
°
C
C
C
Collector current I
C
(mA)
10
3
1
10
2
10
1
1
10
10
10
2
10
3
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
600
500
400
300
200
100
F
F
Collector current I
C
(mA)
1
10
10
2
10
3
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
10
1
40
80
120
160
140
100
60
20
T
T
Emitter current I
E
(mA)
1
10
10
2
V
CB
=
10 V
T
a
=
25
°
C
0
8
7
6
5
4
3
2
1
C
o
Collector-base voltage V
CB
(V)
1
10
10
2
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
0
10
2
6
5
4
3
2
1
N
Emitter current I
E
(mA)
10
1
1
10
V
CB
=
5 V
f
=
1 kHz
R
g
=
2 k
T
a
=
25
°
C
相關(guān)PDF資料
PDF描述
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