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參數(shù)資料
| 型號(hào)： | XP1023-BD-000V |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 24.0-34.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 24000 MHz - 34000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, DIE-8 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 284K |
| 代理商： | XP1023-BD-000V |
Page 4 of 6
App Note [1] Biasing
-
It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3)=6.0V with Id1=50mA,
Id2=90mA and Id3=180mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate
rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the
common gate voltage for a total drain current Id(total)=320 mA. It is also recommended to use active biasing to keep the currents
constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available
and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low
value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain
current and thus drain voltage. The typical gate voltage needed to do this is -0.9V. Typically the gate is protected with Silicon diodes
to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before
applying the positive drain supply.
App Note [2] Bias Arrangement
-
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC
bypass capacitors (~1000-2200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads.
For individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1, 2, 3 and Vg1, 2, 3) needs to have DC bypass
capacitance (~1000-2200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
176.3 deg Celsius
204.0 deg Celsius
231.1 deg Celsius
FITs
1.02E+02
1.07E+03
8.30E+03
MTTF Hours
9.79E+06
9.32E+05
1.21E+05
Rth
63.8
°
C/W
67.8
°
C/W
71.6
°
C/W
Bias Conditions:
Vd1=Vd2=Vd3=6.0V, Id1=50 mA, Id2=90 mA, Id3=180 mA
24.0-34.0 GHz GaAs MMIC
Power Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
April 2007 - Rev 17-Apr-07
P1023-BD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP1023-BD-EV1 | 24.0-34.0 GHz GaAs MMIC Power Amplifier |
| XP1024-BD | 26.0-31.0 GHz GaAs MMIC Power Amplifier |
| XP1024-BD-000V | 26.0-31.0 GHz GaAs MMIC Power Amplifier |
| XP1024-BD-EV1 | 26.0-31.0 GHz GaAs MMIC Power Amplifier |
| XP1025-BD | 28.0-31.0 GHz GaAs MMIC Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1023-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:24.0-34.0 GHz GaAs MMIC Power Amplifier |
| XP1024-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:26.0-31.0 GHz GaAs MMIC Power Amplifier |
| XP1024-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:26.0-31.0 GHz GaAs MMIC Power Amplifier |
| XP1024-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:26.0-31.0 GHz GaAs MMIC Power Amplifier |
| XP1025-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:28.0-31.0 GHz GaAs MMIC Power Amplifier |
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