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參數(shù)資料
| 型號(hào)： | XP1025-BD-000V |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 28.0-31.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 28000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, PLASTIC, DIE-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 280K |
| 代理商： | XP1025-BD-000V |
Mimix Broadband's three stage 28.0-31.0 GHz GaAs MMIC
power amplifier has a small signal gain of 27.0 dB with
+30.0 dBm saturated output power. This MMIC uses Mimix
Broadband’s 0.15 μm GaAs PHEMT device model
technology, and is based upon electron beam lithography
to ensure high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged part
with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process. This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
28.0-31.0 GHz GaAs MMIC
Power Amplifier
Ka-Band 1 W Power Amplifier
27.0 dB Small Signal Gain
+30.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
mA
mA
Min.
28.0
-
-
-
-
-
-
-
-1.0
-
-
-
Typ.
-
10.0
10.0
27.0
+/-1.0
50.0
+30.0
+5.0
-0.7
100
150
400
Max.
31.0
-
-
-
-
-
-
+6.0
0.0
112
170
450
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.5 VDC
112,170,450 mA
+0.3 VDC
TBD
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Page 1 of 5
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
2
(2) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
March 2007 - Rev 05-Mar-07
P1025-BD
XP1025-BD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP1025-BD-EV1 | 28.0-31.0 GHz GaAs MMIC Power Amplifier |
| XP1026-BD | 27.0-32.0 GHz GaAs MMIC Power Amplifier |
| XP1026-BD-000V | 27.0-32.0 GHz GaAs MMIC Power Amplifier |
| XP1026-BD-EV1 | 27.0-32.0 GHz GaAs MMIC Power Amplifier |
| XP1027-BD | 27.0-33.0 GHz GaAs MMIC Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1025-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:28.0-31.0 GHz GaAs MMIC Power Amplifier |
| XP1026-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:27.0-32.0 GHz GaAs MMIC Power Amplifier |
| XP1026-BD_07 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:27.0-32.0 GHz GaAs MMIC Power Amplifier |
| XP1026-BD_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:27.0-32.0 GHz GaAs MMIC |
| XP1026-BD-000V | 制造商:M/A-COM TECHNOLOGY SOLUTIONS 功能描述:XP1026-BD-000V,EPOXY,TC,CW 制造商:M/A-COM Technology Solutions 功能描述:MMW POWER AMPLIFIER |
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