參數資料
型號: XP131A0616SR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: Power MOSFET
中文描述: 功率MOSFET
文件頁數: 1/4頁
文件大小: 62K
代理商: XP131A0616SR
u
8
D
1
S
5
D
4
G
6
D
3
S
7
D
2
S
N-Channel Power MOS FET
DMOS Structure
Low On-State Resistance: 0.016
MAX
Ultra High-Speed Switching
SOP-8 Package
Applications
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems
General Description
The XP131A0616SR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Features
Low on-state resistance:
Rds(on)=0.016
(Vgs=4.5V)
Rds(on)=0.022
(Vgs=2.5V)
Rds(on)=0.045
(Vgs=1.5V)
Ultra high-speed switching
Operational Voltage:
1.5V
High density mounting:
SOP-8
Absolute Maximum Ratings
Equivalent Circuit
Pin Configuration
N-Channel MOS FET
(1 device built-in)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
When implemented on a glass epoxy PCB
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
20
±
8
10
30
10
2.5
150
-55~150
V
V
A
A
A
W
:
:
SYMBOL
RATINGS
UNITS
Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1~3
5~8
4
S
D
G
Source
Drain
Gate
8
1
5
4
6
3
7
2
SOP-8
(TOP VIEW)
Ta=25
:
Note:
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