
850
11
The XP161A01A8PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance
: Rds(on)=0.11
(Vgs=10V)
: Rds(on)=0.18
(Vgs=4.5V)
Ultra high-speed switching
Operational Voltage
: 4.5V
High density mounting
: SOT-89
G
Notebook PCs
G
Cellular and portable phones
G
On-board power supplies
G
Li-ion battery systems
N
N-Channel Power MOS FET
N
DMOS Structure
N
Low On-State Resistance: 0.18
(max)
N
Ultra High-Speed Switching
N
SOT-89 Package
N-Channel MOS FET
(1 device built-in)
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
G
S
D
Gate
Source
Drain
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
When implemented on a ceramic PCB
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
30
±
20
3
9
3
2
150
-55~150
V
V
A
A
A
W
C
C
SYMBOL
RATINGS
UNITS
Ta=25C
Note: