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參數(shù)資料
| 型號： | XP162A12A6PR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOS FET |
| 中文描述： | 功率MOS場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 52K |
| 代理商： | XP162A12A6PR |
u
P-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.17
(max)
Ultra High-Speed Switching
Gate Protect Diode Built-in
SOT - 89 Package
Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
General Description
Features
The XP162A12A6PR is a P-Channel Power MOS FET with low on-state
Low on-state resistance :
Rds (on) = 0.17
( Vgs = -4.5V )
resistance and ultra high-speed switching characteristics.
Rds (on) = 0.3
( Vgs = -2.5V )
Because high-speed switching is possible, the IC can be efficiently
Ultra high-speed switching
Operational Voltage :
-2.5V
set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
Gate protect diode built-in
High density mounting :
SOT - 89
The small SOT-89 package makes high density mounting possible.
Pin Configuration
Pin Assignment
PIN NUMBER
PIN NAME
G
Gate
D
Drain
S
Source
Equivalent Circuit
Absolute Maximum Ratings
Ta=25
O
C
UNITS
SYMBOL
RATINGS
Vdss
Vgss
Id
Idp
Idr
Pd
-20
+ 12
-2.5
-10
-2.5
2
V
V
A
A
A
W
Tch
150
O
C
Tstg
-55 to 150
O
C
P - Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a ceramic PCB
FUNCTION
2
PARAMETER
1
3
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Storage Temperature
Power Dissipation (note)
Channel Temperature
SOT - 89 Top View
2
D
3
S
G
1
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP162A12A6PR_1 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP162A12A6PR_12 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP162A12A6PR-G | 制造商:Torex Semiconductor LTD 功能描述:MOSFET P-CH 20V 2.5A SOT89 |
| XP162A12A6PRN | 制造商:Torex Semiconductor LTD 功能描述: |
| XP164E-CS144 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FPGA |
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