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參數(shù)資料
| 型號(hào)： | XP4286 |
| 英文描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-363 |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 100mA的一（c）|的SOT - 363 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 81K |
| 代理商： | XP4286 |
1
Composite Transistors
XP04315
(XP4315)
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
I
Features
G
Two elements incorporated into one package.
(Transistors with built-in resistor)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
UNR1215(UN1215) + UNR1115(UN1115)
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
CB
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
I
C
V
CBO
50
V
Collector current
100
mA
Collector to base voltage
–50
V
Collector to emitter voltage
V
CEO
I
C
P
T
–50
V
Collector current
–100
mA
Total power dissipation
150
mW
Junction temperature
T
j
T
stg
150
C
Storage temperature
–55 to +150
C
Tr1
Overall
Tr2
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2) 6 : Collector (Tr1)
4 : Emitter (Tr2)
5 : Base (Tr2)
EIAJ : SC–88
S–Mini Type Package (6–pin)
2.1
±
0.1
0
±
0
0
0
2
±
0
0
±
0
0
1.25
±
0.1
0.425
0.425
1
2
3
6
5
4
0.2
±
0.1
0
±
0
0
0
+
–
1
Tr2
Tr1
2
3
4
5
6
Note.) The Part number in the Parenthesis shows conventional part number.
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