參數(shù)資料
型號(hào): XP6501
英文描述: Composite Device - Composite Transistors
中文描述: 復(fù)合設(shè)備-復(fù)合晶體管
文件頁數(shù): 1/3頁
文件大?。?/td> 84K
代理商: XP6501
1
Publication date: August 2003
SJJ00214BED
Composite Transistors
XP06501
(XP6501)
Silicon NPN epitaxial planar type
For general amplification
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SD0601A (2SD601A)
×
2
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 5N
1
2
3
4
6
5
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
60
50
7
Unit
V
V
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
100
mA
Peak collector current
I
CP
200
mA
Total power dissipation
P
T
T
j
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
5
10
2
±
0
1
±
0
1
3
2
0.2
±
0.05
0.12
+0.05
0
±
0
(
1.3
±
0.1
2.0
±
0.1
0
0
±
0
0
+
6
5
4
(0.65) (0.65)
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
EIAJ: SC-88
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SMini6-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
V
CE
=
10 V, I
C
=
2 mA
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
7
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
100
Forward current transfer ratio
h
FE
ratio
*
h
FE
160
460
h
FE(Small/
0.50
0.99
Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.1
0.3
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
3.5
pF
相關(guān)PDF資料
PDF描述
XP06501(XP6501) 複合デバイス - 複合トランジスタ
XP06534 TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 15MA I(C) | SC-88
XP06534(XP6534) Composite Device - Composite Transistors
XP06543(XP6543) 複合デバイス - 複合トランジスタ
XP08081 Composite Device - Composite Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
XP6534 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
XP-653K 制造商:Power Acoustik 功能描述:3-Way 250W Rms 6.5 Inch Dia Speaker Pair 制造商:POWER ACOUSTIK 功能描述:6.5 INCH DIA SPEAKER PAIR 3-WAY 250W RMS
XP-694K 制造商:Power Acoustik 功能描述:4-Way 420W Rms 6 X 9 Inch Speaker Pair 制造商:POWER ACOUSTIK 功能描述:6 X 9 INCH SPEAKER PAIR 4-WAY 420W RMS
XP700 功能描述:螺絲刀、螺母起子和套筒扳手 PRECISION 7PC SET RoHS:否 制造商:Wiha 產(chǎn)品: 類型:Wiha Magic Ring Ball End Hex Keys 大小:
XP-702-F0-15TXIK-10 制造商:Eaton Corporation 功能描述:15 TFT INFRARED, XGA, METAL, XPE OS