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參數(shù)資料
| 型號： | XPD57018S |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 中文描述： | 射頻功率晶體管LdmoST塑料家庭 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 47K |
| 代理商： | XPD57018S |
1/4
TARGET DATA
Jun 2000
PD57018
PD57018S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 18 W with 14 dB gain @ 960 MHz /28V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57018 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57018 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57018’s su-
perior linearity performance makes it an ideal so-
lution for base station applications.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE
PD57018
BRANDING
XPD57018
PowerSO-10RF
(Straight Lead)
ORDER CODE
PD57018S
BRANDING
XPD57018S
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
0
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
GS
Gate-Source Voltage
±
20
V
I
D
Drain Current
2.5
A
P
DISS
Power Dissipation (@ Tc = 70
0
C)
31.7
W
T
j
Max. Operating Junction Temperature
165
0
C
T
STG
Storage Temperature
-65 to 175
0
C
THERMAL DATA
(T
CASE
= 70
0
C)
R
th(j-c)
Junction-Case Thermal Resistance
3.0
0
C/W
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