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參數(shù)資料
| 型號(hào)： | XR1002-BD |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 17.65-33.65 GHz GaAs MMIC Receiver |
| 中文描述： | 17.65-33.65吉赫的GaAs MMIC接收器 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 444K |
| 代理商： | XR1002-BD |
R1002
Mimix Broadband’s 17.65-33.65 GHz GaAs MMIC receiver has a 12.0 dB
gain control range, a noise figure of 3.0 dB and 25.0 dB image rejection
across the band. This device is a three stage LNA followed by a single
transistor "Tee" attenuator and an image reject fundamental resistive
HEMT mixer. At high signal levels the radio AGC system can be used to
reduce the receiver gain improving the IIP3 providing for minimum
distortion at modulation schemes as high as 256 QAM (ETSI-see
Technical Note 1). The image reject mixer eliminates the need for a
bandpass filter after the LNA to remove thermal noise at the image
frequency. I and Q mixer outputs are provided and an external 90 degree
hybrid is required to select the desired sideband. This MMIC uses Mimix
Broadband’s 0.15 μm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect and provide a
rugged part with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
Attenuation
LO Input Drive (P
LO
)
Image Rejection
Noise Figure (NF)
Isolation LO/RF
Input Third Order Intercept (IIP3)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2) (Vg4=-0.8V)
Control Bias Voltage (Vg3)
Supply Current (Id) (Vd=4.5V, Vg=-0.5V Typical)
17.65-33.65 GHz GaAs MMIC
Receiver
Page 1 of 10
Fundamental High Dynamic Range Receiver
Integrated Gain Control
+4.0 dBm Input Third Order Intercept (IIP3)
13.0 dB Conversion Gain
3.0 dB Noise Figure
25.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
General Description
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
300 mA
+0.3 VDC
0.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Measured using constant current, 10dB attenuation and
-20dBm total input power.
(2) At minimum attenuation.
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
3
Units
GHz
GHZ
GHz
GHz
dB
dB
dB
dBm
dBc
dB
dB
dBm
VDC
VDC
VDC
mA
Min.
17.65
17.65
13.65
DC
-
9.5
0.0
+12.0
15.0
-
-
-
-
-1.0
-1.5
-
Typ.
-
-
-
-
10.0
13.0
-
+15.0
25.0
3.0
40.0
+4.0
+4.5
-0.5
-1.2
135
Max.
33.65
33.65
37.65
4.0
-
-
12.0
+18.0
-
3.7
-
-
+5.5
0.0
0.0
270
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
3
April 2007 - Rev 05-Apr-07
R1002-BD
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| XR1002-QB-0N00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm |
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