參數(shù)資料
型號(hào)： XR1007-QD
廠(chǎng)商： Mimix Broadband, Inc.
英文描述： 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm
中文描述： 10.0-18.0 GHz的砷化鎵接收機(jī)QFN封裝，為7x7 mm
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 279K
代理商： XR1007-QD
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
July 2006 - Rev 14-Jul-06
Mimix Broadband’s 10.0-18.0 GHz GaAs packaged receiver has a
noise figure of 2.7 dB and 20.0 dB image rejection across the band.
This device is a two stage balanced LNA followed by an image reject
sub-harmonic anti-parallel diode mixer and includes an integrated
LO buffer amplifer. The image reject mixer eliminates the need for a
bandpass filter after the LNA to remove thermal noise at the image
frequency. I and Q mixer outputs are provided and an external 90
degree hybrid is required to select the desired sideband. This device
uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity. The device comes in a 7x7 mm
QFN Surface Mount Laminate Package offering excellent RF and
thermal properties and is RoHS compliant. This device is well suited
for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
10.0-18.0 GHz GaAs Receiver
QFN, 7x7 mm
Page 1 of 6
Integrated LNA, LO Buffer, Image Reject Mixer
7x7 mm, QFN
+2.0 dBm LO Drive Level
2.7 dB Noise Figure
20.0 dB Image Rejection
100% RF, DC and Noise Figure Testing
Features
General Description
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+5.0 VDC
200, 250 mA
+0.3 VDC
+17 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
3
3
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
2
LO Input Drive (P
LO
)
Image Rejection
2
Noise Figure (NF)
2
Isolation LO/RF @ LOx1/LOx2
Input Third Order Intercept (IIP3)
1,2
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical)
Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
Units
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dB
dBm
VDC
VDC
VDC
mA
mA
Min.
10.0
8.0
DC
-
-
-
-
-
-
-
-
-
-1.2
-
-
Typ.
-
-
-
15.0
15.0
+2.0
20.0
2.7
40.0
+4.0
+4.0
+4.0
-0.3
80
100
Max.
18.0
20.0
4.0
-
-
-
-
-
-
-
+4.5
+4.5
+0.1
120
150
R1007-QD
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