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參數(shù)資料
| 型號： | XR1008-QB |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm |
| 中文描述： | 35.0-45.0 GHz的砷化鎵接收機QFN封裝，為7x7 mm |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 254K |
| 代理商： | XR1008-QB |
35.0-45.0 GHz GaAs Receiver
QFN, 7x7 mm
Page 4 of 7
R1008-QB
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
March 2007 - Rev 21-Mar-07
Recommended Layout
Active Bias Circuit
A
pp
Note [1]
B
iasing
- Please refer to the functional block diagram and pin-out table for biasing information. The device is operated by
biasing VD=4.0V with ID=180 mA by adjusting the applied voltage on VG1. VG1 typically requires-0.5V to result in the drain current being
180mA. The nominal input impedance of this gate is 180, so it should be noted that the nominal gate current will be 2.7mA.
Additionally, a fixed bias of VG2=-0.5V is required to bias the mixer and doubler. Adjusting VG2 above or below this value can adversely affect
conversion gain, image rejection and intercept point performance. It is recommended to use active biasing to keep the currents constant as
the RF power and temperature vary; this gives the most reproducible results. The diagram “Active Bias Circuit” demonstrates a possible
method for active biasing. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single
transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of
the pHEMT is controlled to maintain correct drain current and thus drain voltage. Typically the gate is protected with Silicon diodes to limit
the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive
drain supply
5.0V
4V, 180mA
-5.0V
4.0V
Vd
Vg1
MMBT3906
1
2
3
5k76
12k1
12k1
MMBT3904
1
2
3
5R62 (sense)
100n
100R
1k0
BAV99
1
3
2
100n
BAV99
1
3
2
10R
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| XR1008-QB-0L00 | 35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm |
| XR1008-QB-0L0T | 35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm |
| XR1008-QB-EV1 | 35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm |
| XR72-2.0 | surface mount silicon Zener diodes |
| XR72-2.2 | surface mount silicon Zener diodes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| XR1008-QB_08 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:35.0-45.0 GHz GaAs Receiver SMT, 7x7 mm |
| XR1008-QB_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:35.0-45.0 GHz GaAs Receiver |
| XR1008-QB-0L00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:35.0-45.0 GHz GaAs Receiver SMT, 7x7 mm |
| XR1008-QB-0L0T | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:35.0-45.0 GHz GaAs Receiver SMT, 7x7 mm |
| XR1008-QB-ANP0 | 制造商:M/A-COM Technology Solutions 功能描述:35.0-45.0 GHZ GAAS RECEIVER QFN, 7X7 MM 28QFN |
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