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參數(shù)資料
| 型號： | XU1005-QD |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| 中文描述： | 10.0-18.0 GHz的砷化鎵變送器QFN封裝，7x7mm |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 448K |
| 代理商： | XU1005-QD |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-18.0 GHz GaAs Transmitter
QFN, 7x7mm
Page 4 of 5
MTTF Tables (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions:
Vd1=Vd2=5.0V, Vss=-5.0V, Id1=140mA, Id2=210mA, Id3=140mA, Is1=140mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
App Note [1] Biasing
- This device is operated by separately biasing Vd(1,2)=5.0V, Vss=-5.0V, Id1=140mA, Id2=210mA
and Is1=140mA. Additionally, a mixer is also required with Vg1=-0.6V. Adjusting Vg1 above or below this value can
adversely affect conversion gain, LO/RF isolation and intercept point performance. Gain control can be adjusted by
varying Vg2 from 0.0 to -1.2 V with 0.0V providing minimum attenuation and -1.2 V providing maximum attenuation. It
is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this
gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints,
the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the
drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus
drain voltage. The typical gate voltage needed to do this is -0.2V. Typically the gate is protected with Silicon diodes to
limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available
before applying the positive drain supply.
November 2006 - Rev 02-Nov-06
U1005-QD
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| XU1005-QD-0N00 | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-0N0T | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-EV1 | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1006-QB | 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm |
| XU1006-QB-0L00 | 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XU1005-QD_07 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-0N00 | 制造商:M/A-COM Technology Solutions 功能描述:RF TRANSMITTER MODULE |
| XU1005-QD-0N0T | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-V | 制造商:M/A-COM Technology Solutions 功能描述:RF TRANSMITTER MODULE |
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