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參數(shù)資料
| 型號： | XX1001-QK-0L0T |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm |
| 中文描述： | 36000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 7 X 7 MM, ROHS COMPLIANT, QFN-28 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 241K |
| 代理商： | XX1001-QK-0L0T |
18.0-21.0/36.0-42.0 GHz Doubler and
Power Amplifier, QFN, 7x7mm
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 4 of 5
App Note [1] Biasing
-
It is recommended to separately bias each amplifier stage Vd1 through Vd6 at Vd1=2.5V, Vd2=3.0V, Vd(3,4,5,6)=4.5V with
Id1<1mA, Id2=20mA, Id3=40mA, Id4=70mA, Id5=150mA, Id6=270mA. Separate biasing is recommended if the amplifier is to be used at high levels
of saturation, where gate rectification will alter the effective gate control voltage. As shown in the bonding diagram, it is possible to parallel stages
Vd(3,4,5) with Id(3,4,5)=260mA while maintaining satisfactory performance. For non-critical applications it is possible to parallel stages Vd(3,4,5,6)
together and adjust the common gate voltage Vg(3,4,5,6) for total drain current Id(total)=530mA. It is also recommended to use active biasing to
keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage
available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value
resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus
drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also,
make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
MTTF Tables
MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.
Recommended Layout
XX1001-QK, MTTF (yrs) vs. Backplate Temperature (°C)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+05
55
65
75
85
95
Temperature (°C)
M
X1001-QK
October 2006 - Rev 04-Oct-06
相關(guān)PDF資料 |
PDF描述 |
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| XX1001-QK-EV1 | 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm |
| XX1002-QH_07 | 2.5-6.0/5.0-12.0 GHz Active Doubler QFN, 4x4 mm |
| XX1002-QH-EV1 | 2.5-6.0/5.0-12.0 GHz Active Doubler QFN, 4x4 mm |
| XX1002-QH | 2.5-6.0/5.0-12.0 GHz Active Doubler QFN, 4x4 mm |
| XX1002-QH-0G00 | 2.5-6.0/5.0-12.0 GHz Active Doubler QFN, 4x4 mm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XX1001-QK-0N00 | 制造商:M/A-COM Technology Solutions 功能描述:FREQUENCY MULTIPLIER 制造商:M/A-COM Technology Solutions 功能描述:RF Amp Chip Single Power Amp 21GHz/42GHz 3V/4V/5.5V 28-Pin PQFN Bulk |
| XX1001-QK-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm |
| XX1001-V | 制造商:M/A-COM Technology Solutions 功能描述:FREQUENCY MULTIPLIER |
| XX1002 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler |
| XX1002-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler |
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