參數(shù)資料
型號: XX1001-QK
廠商: Mimix Broadband, Inc.
英文描述: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm
中文描述: 18.0-21.0/36.0-42.0 GHz的倍增器和功放,QFN封裝,7x7mm
文件頁數(shù): 1/5頁
文件大?。?/td> 241K
代理商: XX1001-QK
X1001-QK
18.0-21.0/36.0-42.0 GHz Doubler and
Power Amplifier, QFN, 7x7mm
Integrated Doubler and Power Amplifier
Excellent Saturated Output Stage
+25.0 dBm Output Power
50.0 dBc Fundamental Suppression
Features
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Input Frequency Range (fin)
Output Frequency Range (fout)
Input Return Loss (S11)
Output Return Loss (S22)
Fundamental Rejection
RF Input Power (RF Pin)
Output Power at 0.0 dBm Pin (Pout)
Drain Supply Voltage (Vd1) Doubler
Drain Supply Voltage (Vd2) Buffer Amp
Drain Supply Voltage (Vd3,4,5,6) PA
Gate Supply Voltage (Vg1) Doubler
Drain Supply Current (Id1) Doubler
Drain Supply Current (Id2) Buffer
Drain Supply Current (Id3,4,5,6) (Vg=-0.7V Typical) PA
Units
GHz
GHz
dB
dB
dBc
dBm
dBm
V
V
V
V
mA
mA
mA
Min.
18.0
36.0
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
TBD
12.0
50.0
0.0
+26.0
2.5
3.0
4.5
-1.2
<1.0
20
530
Max.
21.0
42.0
-
-
-
-
-
3.0
4.0
5.5
-
-
25
600
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
800 mA
+0.3 VDC
TBD
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Page 1 of 5
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
October 2006 - Rev 04-Oct-06
Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs
doubler integrates a doubler, a buffer amplifier and
4-stage power amplifier. The device provides
better than +25.0 dBm output power and has
excellent fundamental rejection. The device
comes in a 7x7mm QFN package that is RoHS
compliant. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
General Description
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