參數(shù)資料
型號(hào): XX1005-BD-EV1
廠商: Mimix Broadband, Inc.
英文描述: 8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler
中文描述: 8.0-12.0/16.0-24.0 GHz的砷化鎵單片有源倍頻器
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 228K
代理商: XX1005-BD-EV1
RF In
RF Out
1
2
4
6
5
3
Vg1
Vg2
Vd2
Vd1
0.890
(0.035)
1
2
4
6
0.503
(0.020)
0.884
(0.035)
5
1.085
(0.043)
3
0.683
(0.027)
0.356
(0.014)
1.620
(0.064)
0.0
0.0
0.356
(0.014)
8.0-12.0/16.0-24.0 GHz GaAs MMIC
Active Doubler
Mechanical Drawing
Page 3 of 6
Bias Arrangement
Bypass Capacitors
- See App Note [2]
(Note: Engineering designator is 20DBL0451)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 0.891 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1)
Bond Pad #3 (Vg2)
Bond Pad #4 (Vd1)
Bond Pad #5 (Vd2)
Bond Pad #6 (RF Out)
RF In
Vg1
Vg2
Vd2
Vd1
RF Out
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2007 - Rev 17-Jan-07
X1005-BD
XX1005-BD
XX1005-BD
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