參數(shù)資料
型號(hào): YG802C04R
元件分類(lèi): 整流器
英文描述: 5 A, 40 V, SILICON, RECTIFIER DIODE
封裝: SC-67, TO-220F15, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 53K
代理商: YG802C04R
YG802C04R
(40V / 10A TO-22OF15)
Characteristics
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj=150
o
C
Tj=125
o
C
Tj=100
o
C
Tj=25
o
C
Forward Characteristic
(typ.)
IF
Forward
Current
(A)
VF
Forward Voltage (V)
0
1020
3040
50
10
-3
10
-2
10
-1
10
0
10
1
10
2
Tj=150
o
C
Tj=25
o
C
Tj=100
o
C
Tj=125
o
C
Reverse Characteristic (typ.)
IR
Reverse
Current
(mA)
VR
Reverse Voltage (V)
012
345
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
Reverse Power Dissipation
α=180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
02468
10
12
14
16
50
60
70
80
90
100
110
120
130
140
150
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120
o
Square wave
λ=60
o
Square wave
λ=180
o
Sine wave
λ=180
o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
o
C)
Io
Average Output Current
(A)
VR=30V
Io
360°
1
10
100
1000
Junction Capacitance Characteristic
(typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage
(V)
λ
α
相關(guān)PDF資料
PDF描述
YG802C06R 5 A, 60 V, SILICON, RECTIFIER DIODE
YG802C06 5 A, 60 V, SILICON, RECTIFIER DIODE
YG802C09R SCHOTTKY BARRIER DIODE
YG802C09R 5 A, 90 V, SILICON, RECTIFIER DIODE
YG802C09 SCHOTTKY BARRIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
YG802C04R_01 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE
YG802C04RSC-P 制造商:Fuji Electric 功能描述:
YG802C06 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE
YG802C06R 制造商:Panasonic Industrial Company 功能描述:DIODE
YG802C06RSC-P 制造商:Fuji Electric 功能描述: