參數(shù)資料
型號: YG802C06R
元件分類: 整流器
英文描述: 5 A, 60 V, SILICON, RECTIFIER DIODE
封裝: SC-67, TO-220F15, 3 PIN
文件頁數(shù): 2/3頁
文件大小: 49K
代理商: YG802C06R
YG802C06R
(60V / 10A TO-22OF15)
Characteristics
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj=150
o
C
Tj=125
o
C
Tj=100
o
C
Tj=25
o
C
Forward Characteristic
(typ.)
IF
Forward
Current
(A)
VF
Forward Voltage (V)
0
102030
40506070
10
-3
10
-2
10
-1
10
0
10
1
10
2
Tj=150
o
C
Tj=25
o
C
Tj=100
o
C
Tj=125
o
C
Reverse Characteristic
(typ.)
IR
Reverse
Current
(mA)
VR
Reverse Voltage (V)
01
23
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
0
10
20304050
6070
0
2
4
6
8
10
12
14
Reverse Power Dissipation
α=180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
02
4
6
8
10
12
14
60
70
80
90
100
110
120
130
140
150
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120 o
Square wave
λ=60 o
Square wave
λ=180 o
Sine wave
λ=180 o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
o
C)
Io
Average Output Current
(A)
10
100
10
100
1000
Junction Capacitance Characteristic
(typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage (V)
360°
Io
VR=30V
λ
α
λ
相關(guān)PDF資料
PDF描述
YG802C06 5 A, 60 V, SILICON, RECTIFIER DIODE
YG802C09R SCHOTTKY BARRIER DIODE
YG802C09R 5 A, 90 V, SILICON, RECTIFIER DIODE
YG802C09 SCHOTTKY BARRIER DIODE
YG802N09 10 A, 90 V, SILICON, RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
YG802C06RSC-P 制造商:Fuji Electric 功能描述:
YG802C09 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE
YG802C09R 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE
YG802C09RSC-P 制造商:Fuji Electric 功能描述:
YG802C10R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY BARRIER DIODE