- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄40934 > YG838C04R (FUJI ELECTRIC CO LTD) 30 A, 40 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | YG838C04R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | 整流器 |
| 英文描述： | 30 A, 40 V, SILICON, RECTIFIER DIODE |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 65K |
| 代理商： | YG838C04R |
Type name
Polarity mark
TO-220F
YG838C04R (30A)
(40V / 30A )
Features
Low VF
Super high speed switching
High reliability by planer design
Applications
High speed power switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
VRRM
VRSM
Io
IFSM
Tj
Tstg
Conditions
Sine wave
10ms
180
-40 to +150
Unit
V
A
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
VFM
IRRM
Rth(j-c)
Conditions
IFM=12.5A
VR=VRRM
Junction to case
Max.
0.53
8
2.0
Unit
V
mA
°C/W
tw=500ns, duty=1/40
Square wave, duty=1/2
Tc=85°C
Rating
40
30*
SCHOTTKY BARRIER DIODE
Outline drawings, mm
Connection diagram
1
3
2
* Average forward current of centertap full wave connection
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| YG858C12R | 120 V, SILICON, RECTIFIER DIODE |
| YG858C15R | 150 V, SILICON, RECTIFIER DIODE |
| YG861S15R | 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YG862C15R | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YG864S06R | 60 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| YG838C04RSC-P | 制造商:Fuji Electric 功能描述: |
| YG852C12R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG852C15R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG852C15RSC-P | 制造商:Fuji Electric 功能描述: |
| YG855C12R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Schottky Barrier Diode |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。