參數(shù)資料
型號(hào): YG911S2R
元件分類: 整流器
英文描述: 5 A, 200 V, SILICON, RECTIFIER DIODE
封裝: SC-67, TO-220F15, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 56K
代理商: YG911S2R
YG911S2R
(200V / 5A TO-22OF15)
Characteristics
0.1
1
10
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Tj=150
o
C
Tj=125
o
C
Tj=100
o
C
Tj=25
o
C
Forward Characteristic
(typ.)
IF
Forward
Current
(A)
VF
Forward Voltage
(V)
0
50
100
150
200
10
-1
10
0
10
1
10
2
10
3
10
4
Reverse Characteristic
(typ.)
Tj= 25
o
C
Tj=100
o
C
Tj=125
o
C
Tj=150
o
C
IR
Reverse
Current
(
A)
VR
Reverse Voltage
(V)
01
23
45
0
1
2
3
4
5
6
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
λ
0
50
100
150
200
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Reverse Power Dissipation
α=180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
α
0
1
2
345
67
8
120
130
140
150
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120
o
Square wave
λ=60
o
Square wave
λ=180
o
Sine wave
λ=180
o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
o
C)
Io
Average Output Current
(A)
360°
Io
VR=200V
λ
1
10
100
1
10
100
Junction Capacitance Characteristic
(typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage
(V)
A-169
相關(guān)PDF資料
PDF描述
YG911S2 LOW LOSS SUPER HIGH SPEED RECTIFIER
YG911S2 5 A, 200 V, SILICON, RECTIFIER DIODE
YG911S3R LOW LOSS SUPER HIGH SPEED DIODE
YG911S3R 5 A, 300 V, SILICON, RECTIFIER DIODE
YG912S2R 10 A, 200 V, SILICON, RECTIFIER DIODE
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