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參數(shù)資料
| 型號： | Z0107NN2AL2 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1A TRIACS |
| 中文描述： | 第1A雙向可控硅 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | Z0107NN2AL2 |
Z01
3/8
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 2: RMS on-state current versus case
temperature (full cycle)
Figure 3: RMS on-state current versus ambient
temperature (full cycle)
Figure 4: Relative variation of thermal
impedance versus pulse duration
Figure 5: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 6:
Surge peak on-state current versus
number of cycles
P(W)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I
(A)
T(RMS)
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
(A)
T(RMS)
R
=
th(j-a)
R
th(j-t)
R
=
(TO-92)
th(j-a)
R
th(j-l)
T
(°C)
amb
I
(A)
T(RMS)
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
R
= 60°C/W
(SOT-223)
th(j-a)
R
= 150°C/W
(TO-92)
th(j-a)
T or
(°C)
T
tab
K=[Z
/R
th(j-a)
th(j-a)
]
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
t (s)
Z01xxA
Z01xxN
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
I
, I , I [T ] /
GT
I
, I , I [T =25°C]
GT
T (°C)
I
GT
I
H
& I
L
1
10
100
1000
0
1
2
3
4
5
6
7
8
9
One cycle
t=20ms
I
(A)
TSM
Number of cycles
Non repetitive
T initial = 25°C
Repetitive
= 25°C
amb
T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Z0107NN5AA4 | 1A TRIACS |
| Z0107NN5AL2 | 1A TRIACS |
| Z0109MA1AA2 | 1A TRIACS |
| Z0109MA2AL2 | 1A TRIACS |
| Z0109MA5AA4 | 1A TRIACS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Z0107NN5AA4 | 制造商:STMicroelectronics 功能描述:Thyristor TRIAC 800V 8.5A 4-Pin(3+Tab) SOT-223 T/R |
| Z0107NN5AL2 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1A TRIACS |
| Z0107NN6AA4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Standard 1A Triacs |
| Z0107NUF1AA2 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Standard 1A Triacs |
| Z0107NUF2AL2 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Standard 1A Triacs |
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