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參數(shù)資料
| 型號(hào)： | Z0110SN1AA2 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1A TRIACS |
| 中文描述： | 第1A雙向可控硅 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | Z0110SN1AA2 |
Z01
2/8
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
Table 5: Static Characteristics
Table 6: Thermal resistances
Symbol
Test Conditions
Quadrant
Z01
Unit
03
07
09
10
I
GT
(1)
V
D
= 12 V R
L
= 30
I - II - III - IV MAX.
3
5
5
7
10
10
25
25
mA
V
GT
ALL
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
T
j
= 125°C
ALL
MIN.
0.2
V
I
H
(2)
I
T
= 50 mA
MAX.
7
10
10
25
mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX.
7
10
15
25
mA
II
15
20
25
50
dV/dt (2)
V
D
= 67 %V
DRM
gate open T
j
= 110°C
MIN.
10
20
50
100
V/μs
(dI/dt)c (2) (dV/dt)c = 0.44 A/ms T
j
= 110°C
MIN.
0.5
1
2
5
A/ms
Symbol
Test Conditions
Value
Unit
V
TM
(2)
I
TM
= 1.4 A t
p
= 380 μs
T
j
= 25°C
MAX.
1.56
V
V
to
(2)
Threshold voltage
T
j
= 125°C
MAX.
0.95
V
R
d
(2)
Dynamic resistance
T
j
= 125°C
MAX.
400
m
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25°C
MAX.
5
μA
T
j
= 125°C
0.5
mA
Note 1:
minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2:
for both polarities of A2 referenced to A1.
Symbol
Parameter
Value
Unit
R
th(j-t)
Junction to tab (AC)
SOT-223
25
°C/W
R
th(j-I)
Junction to lead (AC)
TO-92
60
R
th(j-a)
Junction to ambient
S = 5 cm
2
SOT-223
60
°C/W
TO-92
150
S = Copper surface under tab.
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