參數(shù)資料
型號： ZCN9150A
廠商： ZETEX PLC
元件分類： IGBT 晶體管
英文描述： 0.32 A, 500 V, N-CHANNEL IGBT
封裝： TO-92 COMPATIBLE, E-LINE PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 78K
代理商： ZCN9150A
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BVCES
500
V
VGE=0V, IC=1mA
Gate-Emitter Voltage
VGE
1
4.5
V
IC=1mA, VCG=25V
Gate-Emitter Leakage
IGES
20
nA
VGS=± 20V, VCE=0V
Zero Gate Voltage
Collector Current
ICES
10
A
VCE=500V, VGE=0
Collector-Emitter
Saturation Voltage (1)
VCE(sat)
3.5
V
IC=500mA, VGE=10 V
Static Collector-Emitter
On-State Resistance (1)
RCE(on)
7
VGE=10V,IC=0.5A
Input Capacitance (2)
Cies
160
pF
Output Capacitance (2) Coes
12
pF
VCE=25 V, VGE=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Cres
6pF
Switching Times (2)(3) ton
14
ns
VCC=200V, VGE=10V
IC=200mA, RGE=50
toff
475
ns
(1) Measured under pulsed conditions. Width=300s. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
DIODE CHARACTERISTICS(at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Diode Forward Voltage VF
4.3
7
V
IC=100mA
1
VCE - Collector-Emitter Voltage (V)
Capacitance v Collector-Emitter Voltage
Transconductance v Collector Current
Safe Operating Area At Tamb=25°C
(Single Pulse)
Saturation Characteristics
VCE Collector-Emitter Voltage (V)
Pulsed Current v Temperature
Tj - Junction Temperture (°C)
25
0
50
75
100
IC-Collector Current (A)
1
0
23
4
VCE Collector-Emitter Voltage (V)
1000
100
110
1
10
100
0.1
0.4
0.2
4.0
3.0
1.0
2.0
0
0.01
0.1
1
10
0
0.3
0.5
100
10
6
8
10
1
0.01
0.1
Fall Time v Collector Current
0.1
1
0.01
0
2
4
10
14
10
8
6
5
4
3.5
3
2.5
NOTE : 80s PULSED
TEST : VCE=10V
5
1.0
0.2
0.4
0.6
0.8
IC - Collector Current (A)
100us
1ms
10ms
100ms
1s
DC
10us
125
1000
VGE=20V
PULSED TEST
NOTE : 80s
Cres
Coes
Cies
VCE=200V
TYPICAL CHARACTERISTICS
ZCN9150A
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