參數(shù)資料
型號: ZHB6792
廠商: ZETEX PLC
元件分類: 功率晶體管
英文描述: BIPOLAR TRANSISTOR H-BRIDGE
中文描述: 1 A, 70 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
封裝: SM-8, 8 PIN
文件頁數(shù): 7/7頁
文件大?。?/td> 100K
代理商: ZHB6792
He
E
D
b
e
Lp
45°
o
3
c
1
2
3
4
8
7
6
5
e
A
A1
Dim
Millimetres
Inches
Min
Typ
Max
Min
Typ
Max
A
1.7
0.067
A1
0.02
0.1
0.0008
0.004
b
0.7
0.028
c
0.24
0.32
0.009
0.013
D
6.3
6.7
0.248
0.264
E
3.3
3.7
0.130
0.145
e1
4.59
0.180
e2
1.53
0.060
He
6.7
7.3
0.264
0.287
Lp
0.9
0.035
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstrae 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1998
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
ZHB6792
相關PDF資料
PDF描述
ZHCS1000 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT”
ZHCS1006 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT”
ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
ZHCS2000TA 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
ZHCS2000TC 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
相關代理商/技術參數(shù)
參數(shù)描述
ZHB6792TA 功能描述:兩極晶體管 - BJT H-Bridge-70V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZHB6792TC 功能描述:兩極晶體管 - BJT H-Bridge-70V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZHBTGFR421 制造商:Seoul Semiconductor 功能描述:(1.6*1.5*0.5) - Tape and Reel
ZH-C-125-WT 制造商:Brady Corporation 功能描述:0.125 IN H X 100 FT (3.200 MM H X 30.48 M W)
ZH-C-125-WT-J 制造商:Brady Corporation 功能描述:0.125 IN H X 225 FT (3.200 MM H X 68.6 M W)