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| 型號(hào)： | ZNBG2001X10 |
| 廠商： | ZETEX PLC |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | FET BIAS CONTROLLER |
| 中文描述： | SPECIALTY ANALOG CIRCUIT, PDSO10 |
| 封裝： | MSOP-10 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 514K |
| 代理商： | ZNBG2001X10 |
DEVICE DESCRIPTION
The ZNBG series of devices are designed to meet the
bias requirements of GaAs and HEMT FETs
commonly used in satellite receiver LNBs, PMR,
cellular telephones etc. with a minimum of external
components.
With the addition of two capacitors and a resistor the
devices provide drain voltage and current control for
2 external grounded source FETs, generating the
regulated negative rail required for FET gate biasing
whilst operating from a single supply. This negative
bias, at -3 volts, can also be used to supply other
external circuits.
The ZNBG2000/1 contains two bias stages. A single
resistor allows FET drain current to be set to the
desired level. The series also offers the choice of
drain voltage to be set for the FETs, the ZNBG2000
gives 2.2 volts drain whilst the ZNBG2001 gives 2
volts.
These devices are unconditionally stable over the full
working temperature with the FETs in place, subject
to the inclusion of the recommended gate and drain
capacitors. These ensure RF stability and minimal
injected noise.
FEATURES
Provides bias for GaAs and HEMT FETs
Drives up to two FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator requires only 2
external capacitors
Choice in drain voltage
Wide supply voltage range
MSOP surface mount package
It is possible to use less than the devices full
complement of FET bias controls, unused drain and
gate connections can be left open circuit without
affecting operation of the remaining bias circuits.
In order to protect the external FETs the circuits have
been designed to ensure that, under any conditions
including power up/down transients, the gate drive
from the bias circuits cannot exceed the range -3.5V
to 0.7V. Furthermore if the negative rail experiences a
fault condition, such as overload or short circuit, the
drain supply to the FETs will shut down avoiding
excessive current flow.
The ZNBG2000/1 are available in MSOP10 packages
for the minimum in devices size. Device operating
temperature is -40 to 80°C to suit a wide range of
environmental conditions.
APPLICATIONS
Satellite receiver LNBs
Private mobile radio (PMR)
Single in single out C Band LNB
Cellular telephones
ISSUE 1 - AUGUST 2001
FET BIAS CONTROLLER
ZNBG2000
ZNBG2001
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZNBG2000X10 | PTSE 19C 19#20 PIN RECP |
| ZNBG2000 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:53; Connector Shell Size:23; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| ZNBG2001 | FET BIAS CONTROLLER |
| ZNBG3000 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:55; Connector Shell Size:23; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| ZNBG3001Q16 | FET BIAS CONTROLLER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZNBG3000 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:FET BIAS CONTROLLER |
| ZNBG3000Q16 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:FET BIAS CONTROLLER |
| ZNBG3000Q16TC | 功能描述:MOSFET 3BIAS GENERATOR 2.2V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZNBG3001 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:FET BIAS CONTROLLER |
| ZNBG3001Q16 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:FET BIAS CONTROLLER |
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