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參數(shù)資料
| 型號： | ZNBG3010 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | TV 6C 6#8(TWINAX) SKT RECP |
| 中文描述： | 場效應(yīng)管偏置控制器和極性開關(guān) |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 375K |
| 代理商： | ZNBG3010 |
APPLICATIONS CIRCUIT
APPLICATIONS INFORMATION
The above is a partial application circuit for the ZNBG series showing all external components
required for appropriate biasing. The bias circuits are unconditionally stable over the full
temperature range with the associated FETs and gate and drain capacitors in circuit.
Capacitors C
D
and C
G
ensure that residual power supply and substrate generator noise is not
allowed to affect other external circuits which may be sensitive to RF interference. They also
serve to suppress any potential RF feedthrough between stages via the ZNBG device. These
capacitors are required for all stages used. Values of 10nF and 4.7nF respectively are
recommended however this is design dependent and any value between 1nF and 100nF could
be used.
The capacitors C
NB
and C
SUB
are an integral part of the ZNBGs negative supply generator. The
negative bias voltage is generated on-chip using an internal oscillator. The required value of
capacitors C
NB
and C
SUB
is 47nF. This generator produces a low current supply of approximately
-3 volts. Although this generator is intended purely to bias the external FETs, it can be used to
power other external circuits via the C
SUB
pin.
Resistor R
CAL
sets the drain current at which all external FETs are operated. If any bias control
circuit is not required, its related drain and gate connections may be left open circuit without
affecting the operation of the remaining bias circuits.
The ZNBG devices have been designed to protect the external FETs from adverse operating
conditions. With a JFET connected to any bias circuit, the gate output voltage of the bias circuit
can not exceed the range -3.5V to 1V, under any conditions including powerup and powerdown
transients. Should the negative bias generator be shorted or overloaded so that the drain current
of the external FETs can no longer be controlled, the drain supply to FETs is shut down to avoid
damage to the FETs by excessive drain current.
ZNBG3010
ZNBG3011
4-120
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZNBG3010Q16 | FET BIAS CONTROLLER AND POLARITY SWITCH |
| ZNBG3011 | TV 6C 6#8(TWINAX) SKT RECP |
| ZNBG3011Q16 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:11; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| ZNBG3110 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:11; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| ZNBG3110Q20 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:11; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZNBG3010Q16 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:FET BIAS CONTROLLER AND POLARITY SWITCH |
| ZNBG3010Q16TC | 功能描述:MOSFET BIAS H/V SWITCH 2.2V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZNBG3011 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:FET BIAS CONTROLLER AND POLARITY SWITCH |
| ZNBG3011Q16 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:FET BIAS CONTROLLER AND POLARITY SWITCH |
| ZNBG3110 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION |
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