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ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
Document Number 88425
02-May-02
www.vishay.com
1
Features
Silicon Stabilizer Diodes
Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In the
reverse direction, these devices show the behavior of
forward-biased silicon diodes.
The end of the ZTE device marked with the cathode ring
is to be connected: ZTE1.5 and ZTE2 to the negative
pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the
positive pole of the supply voltage.
These diodes are also available in MiniMELF case with
the type designation LL1.5 … LL 5.1.
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Packaging codes/options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
DO-204AH (DO-35 Glass)
m
m
m
max.
Cathode
Mark
.020 (0.52)
max.
.079 (2.0)
Dimensions are in inches
and (millimeters)
Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Operating Current (see Table “Characteristics”)
Inverse Current
I
F
100
300
(1)
mA
Power dissipation at T
amb
= 25°C
P
tot
mW
Junction temperature
T
J
150
°C
Storage temperature range
T
S
–55 to +150
°C
Electrical and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage at I
F
= 10 mA
V
F
α
VZ
α
VZ
R
θ
JA
–
–
1.1
V
Temperature Coefficient of the
stabilized voltage at I
Z
= 5 mA
ZTE1.5, ZTE2
ZTE2.4, ZTE5.1
–
–
–26
–34
–
–
10
–4
/°C
10
–4
/°C
Thermal resistance junction to ambient air
–
–
400
(1)
°C/W
Voltage Stabilizers